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US3268744A Expired / Lapsed US ⏱️ 0.0 years remaining

High capacitance microelectronic decoupling device with low shunt resistance at high frequencies

Assignee: International Business Machines Corp
•
Filing: 1964-04-16
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Granted: 1966-08-23
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Expires: 1984-04-16
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Abstract

No abstract record available.

Inventors

  • 👤 Harold D Kaiser
  • 👤 Donald D Metzger

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 17:31
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; H01G4/12; H01G4/1209

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 70 words
IN AN ELECTRICAL CIRCUIT INCLUDING A POWER SUPPLY AND A MICROELECTRONIC MODULE CIRCUIT CONNECTED BETWEEN GROUND AND SAID POWER SUPPLY, THE COMBINATION OF A HIGH CAPACITANCE DECOUPLING DEVICE CONNECTED IN DECOUPLING RELATIONSHIP TO SAID MODULE CIRCUIT, SAID DEVICE COMPRISING: FIRST AND SECOND ELECTRODES; AND A LAYER OF A DIELECTRIC TYPE MATERIAL SECURED BETWEEN SAID ELECTRODES, SAID MATERIAL INCLUDING AT LEAST 94% ZINC OXIDE AND NO MORE THAN 6% BISMUTH TRIOXIDE.
Claim 2
Dependent Claim 70 words
IN AN ELECTRICAL CIRCUIT INCLUDING A POWER SUPPLY AND A MICROELECTRONIC MODULE CIRCUIT CONNECTED BETWEEN GROUND AND SAID POWER SUPPLY, THE COMBINATION OF A HIGH CAPACITANCE DECOUPLING DEVICE CONNECTED IN DECOUPLING RELATIONSHIP TO SAID MODULE CIRCUIT, SAID DEVICE COMPRISING: FIRST AND SECOND ELECTRODES; AND A LAYER OF A DIELECTRIC TYPE MATERIAL SECURED BETWEEN SAID ELECTRODES, SAID MATERIAL INCLUDING AT LEAST 94% ZINC OXIDE AND NO MORE THAN 6% BISMUTH TRIOXIDE.
Claim 3
Dependent Claim 60 words
A HIGH CAPACITANCE DECOUPLING DEVICE FOR EMPLOYMENT IN ELECTRICAL CIRCUITS, SAID DEVICE COMPRISING: FIRST AND SECOND ELECTRODES; AND A LAYER OF A DIELECTRIC TYPE MATERIAL SECURED BETWEEN SAID ELECTRODES, SAID MATERIAL INCLUDING AT LEAST 94% ZINC OXIDE AND NO MORE THAN 6% BISMUTH TRIOXIDE; SAID ELECTRODES BEING OF A CONDUCTIVE MATERIAL INCLUDING NO MORE THAN 10% OF A SEMICONDUCTOR OXIDE.
Claim 4
Dependent Claim 60 words
A HIGH CAPACITANCE DECOUPLING DEVICE FOR EMPLOYMENT IN ELECTRICAL CIRCUITS, SAID DEVICE COMPRISING: FIRST AND SECOND ELECTRODES; AND A LAYER OF A DIELECTRIC TYPE MATERIAL SECURED BETWEEN SAID ELECTRODES, SAID MATERIAL INCLUDING AT LEAST 94% ZINC OXIDE AND NO MORE THAN 6% BISMUTH TRIOXIDE; SAID ELECTRODES BEING OF A CONDUCTIVE MATERIAL INCLUDING NO MORE THAN 10% OF A SEMICONDUCTOR OXIDE.

References Cited (Backward Citations)

CH275258A Cited
US2509758A Cited
US3080239A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1969-08-22 1970-02-21 1970-08-23 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1973-08-22 1974-02-21 1974-08-23 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1977-08-22 1978-02-21 1978-08-23 $7700.00 Window Closed / Lapsed

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