Quantum mechanical tunnel injection amplifying apparatus

Claim 1

SOLID STATE ELECTRON APPARATUS COMPRISING: (A) A SUPPORT MEMBER CAPABLE OF BEING READILY DISSOLVED BY A LIQUID, (B) A SOURCE ELECTRODE DISPOSED ON ONE SURFACE OF SAID SUPPORT MEMBER, (C) SAID SOURCE ELECTRODE BEING FURTHER PROVIDED WITH AN OXIDE COATING THEREON, (D) A DRAIN ELECTRODE DISPOSED ON THE SURFACE OF SAID SUPPORT MEMBER CONTIGUOUS TO SAID SOURCE ELECTRODE AND SLIGHTLY OVERLAPPING THE SAME, (E) SAID SUPPORT MEMBER HAVING AN APERTURE EXTENDING THROUGH FROM THE OPPOSITE SURFACE THEREOF TO EXPOSE PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES, (F) A TUNNEL INSULATING MEMBER DISPOSED ADJACENT THE EXPOSED PORTIONS OF SAID SOURCE AND DRAIN ELECTRODES, (G) A BLOCKING INSULATING LAYER OVERLYING SAID TUNNEL INSULATING LAYER, AND (H) A GATE ELECTRODE DISPOSED ON SAID BLOCKING INSULATOR AND EFFECTIVE WHEN ENERGIZED WITH A SUITABLE ELECTRICAL POTENTIAL TO CREATE A CONDUCTIVE CHANNEL BETWEEN SAID SOURCE AND SAID DRAIN FOR CONTROLLING ELECTRONS WHICH ARE OBLIGED TO TUNNEL FROM SAID SOURCE THROUGH SAID TUNNEL INSULATOR ALONG SAID CHANNEL AND INTO SAID DRAIN.