US3198670A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Multi-tunnel diode
Assignee: Bunker Ramo Corp
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Filing: 1961-03-09
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Granted: 1965-08-03
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Expires: 1981-03-09
Abstract
No abstract record available.
Inventors
- 👤 Nissim Samuel
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 09:50
CPC Classifications
H; H03; H03K; H03K3/00; H03K3/02; H03K3/313; H03K3/315; H10; H10D; H10D99/00; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
141 words
A SEMICONDUCTOR DEVICE COMPRISING: A BODY OF SEMICONDUCTOR MATERIAL, FIRST AND SECOND ADJACENT CONDUCTIVITY REGIONS WITHIN SAID BODY, SAID FIRST REGION BEING DOPED TO DEGENERACY BY A FIRST TYPE CONDUCTIVITY DETERMINING IMPURITY, SAID SECOND REGION BEING DOPED TO DEGENERACY BY AN OPPOSITE TYPE CONDUCTIVITY DETERMINING IMPURITY, AN ABRUPT RECTIFYING JUNCTION WHICH EXHIBITS TUNNELING FORMED THEREBETWEEN, ADDITIONALLY INTRODUCED IMPURITIES IN SAID FIRST REGION, EACH OF SAID ADDITIONAL IMPURITIES HAVING A DISCRETE EMPTY ENERGY LEVEL BAND WITHIN THE FORBIDDEN BAND GAP OF SAID FIRST REGION, EACH OF SAID BANDS BEING SPACED ONE FROM THE OTHER IN SAID FORBIDDEN BAND GAP TO FORM DISCRETE EMPTY ENERGY BANDS INTO WHICH ELECTRONS WILL FLOW FROM SAID SECOND REGION THROUGH SAID JUNCTION AT PREDETERMINED FORWARD ELECTRICAL BIASES APPLIED TO SAID DEVICE TO FORM A CORRESPONDING PLURALITY OF NEGATIVE RESISTANCE REGIONS IN THE CURRENT-VOLTAGE CHARACTERISTICS OF SAID DEVICE.
Claim 2
Dependent Claim
141 words
A SEMICONDUCTOR DEVICE COMPRISING: A BODY OF SEMICONDUCTOR MATERIAL, FIRST AND SECOND ADJACENT CONDUCTIVITY REGIONS WITHIN SAID BODY, SAID FIRST REGION BEING DOPED TO DEGENERACY BY A FIRST TYPE CONDUCTIVITY DETERMINING IMPURITY, SAID SECOND REGION BEING DOPED TO DEGENERACY BY AN OPPOSITE TYPE CONDUCTIVITY DETERMINING IMPURITY, AN ABRUPT RECTIFYING JUNCTION WHICH EXHIBITS TUNNELING FORMED THEREBETWEEN, ADDITIONALLY INTRODUCED IMPURITIES IN SAID FIRST REGION, EACH OF SAID ADDITIONAL IMPURITIES HAVING A DISCRETE EMPTY ENERGY LEVEL BAND WITHIN THE FORBIDDEN BAND GAP OF SAID FIRST REGION, EACH OF SAID BANDS BEING SPACED ONE FROM THE OTHER IN SAID FORBIDDEN BAND GAP TO FORM DISCRETE EMPTY ENERGY BANDS INTO WHICH ELECTRONS WILL FLOW FROM SAID SECOND REGION THROUGH SAID JUNCTION AT PREDETERMINED FORWARD ELECTRICAL BIASES APPLIED TO SAID DEVICE TO FORM A CORRESPONDING PLURALITY OF NEGATIVE RESISTANCE REGIONS IN THE CURRENT-VOLTAGE CHARACTERISTICS OF SAID DEVICE.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-08-02 | 1969-02-01 | 1969-08-03 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-08-02 | 1973-02-01 | 1973-08-03 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-08-02 | 1977-02-01 | 1977-08-03 | $7700.00 | Window Closed / Lapsed |