US3266961A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of etching si and ge semiconductor bodies
Assignee: Siemens Schuckertwerke AG
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Filing: 1962-01-23
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Granted: 1966-08-16
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Expires: 1982-01-23
Abstract
No abstract record available.
Inventors
- 👤 Emeis Reimer
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 16:50
CPC Classifications
C; C23; C23F; C23F3/00; C23F3/04; C23F1/00; C23F1/10; C23F1/14; C23F1/32; C23F1/40
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
57 words
THE METHOD OF ETCHING SUBSTANTIALLY MONOCRYSTALLINE SEMICONDUCTOR BODIES SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM AFTER ALPPING, WHICH COMPRISES IMMERSING SAID SEMICONDUCTOR BODIES IN AN ETCHING SOLUTION OF CONCENTRATED POTASSIUM HYDROXIDE SOLUTION, AT ROOM TEMPERATURE, FOR A PERIOD OF ABOUT 24 HOURS RESLTING IN MAINTAINING THE PLANES OF THE FLAT SIDES IN PLANAR PARALLEL RELATIONSHIP.
Claim 2
Independent Claim
57 words
THE METHOD OF ETCHING SUBSTANTIALLY MONOCRYSTALLINE SEMICONDUCTOR BODIES SELECTED FROM THE GROUP CONSISTING OF SILICON AND GERMANIUM AFTER ALPPING, WHICH COMPRISES IMMERSING SAID SEMICONDUCTOR BODIES IN AN ETCHING SOLUTION OF CONCENTRATED POTASSIUM HYDROXIDE SOLUTION, AT ROOM TEMPERATURE, FOR A PERIOD OF ABOUT 24 HOURS RESLTING IN MAINTAINING THE PLANES OF THE FLAT SIDES IN PLANAR PARALLEL RELATIONSHIP.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-15 | 1970-02-14 | 1970-08-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-15 | 1974-02-14 | 1974-08-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-15 | 1978-02-14 | 1978-08-16 | $7700.00 | Window Closed / Lapsed |