Patent US3264707A successfully refreshed from Google Patents.
US3264707A
Expired / Lapsed
US
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Method of fabricating semiconductor devices
Assignee: RCA Corp
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Filing: 1963-12-30
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Granted: 1966-08-09
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Expires: 1983-12-30
Abstract
No abstract record available.
Inventors
- 👤 George T Elie
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 11:31
CPC Classifications
H; H10; H10F; H10F71/00; H10F71/127; H10P; H10P14/00; H10P14/60; H10P95/00; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/544; Y10; Y10S; Y10S438/00; Y10S438/974
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
152 words
THE METHOD OF FABRICATING A SOLAR CELL, COMPRISING THE STEPS OF: POLISHING ONE FACE OF A GIVEN CONDUCTIVITY TYPE GALLIUM ARSENIDE WAFER; TREATING SAID GALLIUM ARSENIDE WAFER IN A SOLUTION OF A STRONG OXIDIZING AGENT SELECTED FROM THE GROUP CONSISTING OF CHROMIUM TRIOXIDE, OSMIUM TETROXIDE, CERIC SULFATE, THE PERMANANGATES OF AN ALKALI METAL, THE DICHROMATES OF AN ALKALI METAL, AND CONCENTRATED HYDROGEN PEROXIDE FOR A PERIOD OF TIME SUFFICIENT TO SHIFT THE PEAK SPECTRAL RESPONSE OF THE CELL TO LIGHT HAVING A WAVELENGTH OF .75 TO .79 MICRON, DIFFUSING AN OPPOSITE CONDUCTIVITY TYPE MODIFIER INTO SAID ONE WAFER FACE IN AN INERT AMBIENT TO FORM A THIN SURFACE REGION OF SAID OPPOSITE CONDUCTIVELY TYPE AND A RECTIFYING BARRIER BETWEEN SAID OPPOSITE TYPE REGION AND THE BULK OF SAID WAFER; AND, ATTACHING ONE ELECTRICAL LEAD TO SAID OPPOSITE TYPE REGION AND ANOTHER ELECTRICAL LEAD TO THE GIVEN CONDUCTIVITY TYPE BULK OF SAID WAFER.
Claim 2
Independent Claim
152 words
THE METHOD OF FABRICATING A SOLAR CELL, COMPRISING THE STEPS OF: POLISHING ONE FACE OF A GIVEN CONDUCTIVITY TYPE GALLIUM ARSENIDE WAFER; TREATING SAID GALLIUM ARSENIDE WAFER IN A SOLUTION OF A STRONG OXIDIZING AGENT SELECTED FROM THE GROUP CONSISTING OF CHROMIUM TRIOXIDE, OSMIUM TETROXIDE, CERIC SULFATE, THE PERMANANGATES OF AN ALKALI METAL, THE DICHROMATES OF AN ALKALI METAL, AND CONCENTRATED HYDROGEN PEROXIDE FOR A PERIOD OF TIME SUFFICIENT TO SHIFT THE PEAK SPECTRAL RESPONSE OF THE CELL TO LIGHT HAVING A WAVELENGTH OF .75 TO .79 MICRON, DIFFUSING AN OPPOSITE CONDUCTIVITY TYPE MODIFIER INTO SAID ONE WAFER FACE IN AN INERT AMBIENT TO FORM A THIN SURFACE REGION OF SAID OPPOSITE CONDUCTIVELY TYPE AND A RECTIFYING BARRIER BETWEEN SAID OPPOSITE TYPE REGION AND THE BULK OF SAID WAFER; AND, ATTACHING ONE ELECTRICAL LEAD TO SAID OPPOSITE TYPE REGION AND ANOTHER ELECTRICAL LEAD TO THE GIVEN CONDUCTIVITY TYPE BULK OF SAID WAFER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-08 | 1970-02-07 | 1970-08-09 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-08 | 1974-02-07 | 1974-08-09 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-08 | 1978-02-07 | 1978-08-09 | $7700.00 | Window Closed / Lapsed |