Patent US3264537A successfully refreshed from Google Patents.
US3264537A
Expired / Lapsed
US
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Decoupling capacitor
Assignee: International Business Machines Corp
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Filing: 1965-06-21
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Granted: 1966-08-02
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Expires: 1985-06-21
Abstract
No abstract record available.
Inventors
- 👤 Ronald A Delaney
- 👤 Harold D Kaiser
- 👤 Arthur H Mones
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-26 10:39
CPC Classifications
H; H01; H01G; H01G4/00; H01G4/002; H01G4/018; H01G4/06; H01G4/08; H01G4/10; Y; Y10; Y10T; Y10T29/00; Y10T29/43; Y10T29/435
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
56 words
AN ELECTRIC DEVICE COMPRISING: A PAIR OF ELECTRODES; A DIELECTRIC BODY BETWEEN SAID PAIR OF ELECTRODES; SAID DIELECTRIC BODY BEING COMPOSED OF A SINTERED UNIFORM MIXTURE OF FINELY DIVIDED PARTICLES OF ABOUT AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE, NO MORE THAN ABOUT 6 PERCENT BY WEIGH OF BISMUTH TRIOXIDE AND A POSITIVE MONOVALENT DOPANT.
Claim 2
Dependent Claim
56 words
AN ELECTRIC DEVICE COMPRISING: A PAIR OF ELECTRODES; A DIELECTRIC BODY BETWEEN SAID PAIR OF ELECTRODES; SAID DIELECTRIC BODY BEING COMPOSED OF A SINTERED UNIFORM MIXTURE OF FINELY DIVIDED PARTICLES OF ABOUT AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE, NO MORE THAN ABOUT 6 PERCENT BY WEIGH OF BISMUTH TRIOXIDE AND A POSITIVE MONOVALENT DOPANT.
Claim 3
Independent Claim
205 words
A METHOD FOR FABRICATING A HIGH IMPEDANCE CAPACITOR DEVICE COMPRISING: PROVIDING ON A DIELECTRIC SUBSTRATE A FIRST CONDUCTIVE ELECTRODE; DEPOSITING A COMPOSITE DIELECTRIC SUB-LAYER OVER SAID FIRST ELECTRODE AND FIRING SAID LAYER AT AN ELEVATED TEMPERATURE, SAID SUB-LAYER BEING COMPOSED OF ABOUT, AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE AND NO MORE THAN ABOUT 6 PERCENT BY WEIGHT OF BISMUTH TRIOXIDE; DEPOSITING A SECOND DIELECTRIC SUB-LAYER OVER SAID FIRST DIELECTRIC SUB-LAYER AND DRYING TO FORM AN INTERNAL DIELECTRIC LAYER, SAID SECOND SUB-LAYER BEING COMPOSED OF ABOUT, AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE AND NO MORE THAN ABOUT 6 PERCENT BY WEIFHT BISMUTH TRIOXIDE; PROVIDING A SECOND CONDUCTIVE ELECTRODE OVER SAID INTERNAL DIELECTRIC LAYER; DEPOSITING AN EXTERNAL DIELECTRIC LAYER OVER SAID SECOND ELECTRODE; SAID LAYER BEING COMPOSED OF ABOUT, AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE, NO MORE THAN ABOUT 6 PERCENT BY WEIGHT BISMUTH TRIOXIDE AND A POSITIVE MONOVALENT DOPANT; AND FIRING THE ASSEMBLAGE FOR A TIME AND AT A TEMPERATURE THAT CAUSES SAID DOPANT TO DIFFUSE FROM SAID EXTERNAL DIELECTRIC LAYER THROUGH SAID SECOND ELECTRODE AND INTO THE GRAIN BOUNDARIES OF SAID INTERNAL DIELECTRIC LAYER TO THEREBY PROVIDE AN IMPROVED CAPACITOR DEVICE HAVING HIGH D.C. IMPEDANCE AND SUPERIOR DAMPING CHARACTERISTICS.
Claim 4
Independent Claim
205 words
A METHOD FOR FABRICATING A HIGH IMPEDANCE CAPACITOR DEVICE COMPRISING: PROVIDING ON A DIELECTRIC SUBSTRATE A FIRST CONDUCTIVE ELECTRODE; DEPOSITING A COMPOSITE DIELECTRIC SUB-LAYER OVER SAID FIRST ELECTRODE AND FIRING SAID LAYER AT AN ELEVATED TEMPERATURE, SAID SUB-LAYER BEING COMPOSED OF ABOUT, AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE AND NO MORE THAN ABOUT 6 PERCENT BY WEIGHT OF BISMUTH TRIOXIDE; DEPOSITING A SECOND DIELECTRIC SUB-LAYER OVER SAID FIRST DIELECTRIC SUB-LAYER AND DRYING TO FORM AN INTERNAL DIELECTRIC LAYER, SAID SECOND SUB-LAYER BEING COMPOSED OF ABOUT, AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE AND NO MORE THAN ABOUT 6 PERCENT BY WEIFHT BISMUTH TRIOXIDE; PROVIDING A SECOND CONDUCTIVE ELECTRODE OVER SAID INTERNAL DIELECTRIC LAYER; DEPOSITING AN EXTERNAL DIELECTRIC LAYER OVER SAID SECOND ELECTRODE; SAID LAYER BEING COMPOSED OF ABOUT, AT LEAST 94 PERCENT BY WEIGHT ZINC OXIDE, NO MORE THAN ABOUT 6 PERCENT BY WEIGHT BISMUTH TRIOXIDE AND A POSITIVE MONOVALENT DOPANT; AND FIRING THE ASSEMBLAGE FOR A TIME AND AT A TEMPERATURE THAT CAUSES SAID DOPANT TO DIFFUSE FROM SAID EXTERNAL DIELECTRIC LAYER THROUGH SAID SECOND ELECTRODE AND INTO THE GRAIN BOUNDARIES OF SAID INTERNAL DIELECTRIC LAYER TO THEREBY PROVIDE AN IMPROVED CAPACITOR DEVICE HAVING HIGH D.C. IMPEDANCE AND SUPERIOR DAMPING CHARACTERISTICS.
References Cited (Backward Citations)
US3154503A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-08-01 | 1970-01-31 | 1970-08-02 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-08-01 | 1974-01-31 | 1974-08-02 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-08-01 | 1978-01-31 | 1978-08-02 | $7700.00 | Window Closed / Lapsed |