US3261730A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of forming gallium arsenide semiconductor devices
Assignee: General Electric Co
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Filing: 1964-03-12
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Granted: 1966-07-19
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Expires: 1984-03-12
Abstract
No abstract record available.
Inventors
- 👤 Erik M Pell
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-02 03:43
CPC Classifications
H; H10; H10P; H10P95/00; C; C30; C30B; C30B31/00; C30B31/04; H10D; H10D18/00; H10D18/01; H10D99/00; H10D62/00; H10D62/80; H10D62/85; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/917; Y10S438/979
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
151 words
THE METHOD OF MAKING SEMICONDUCTOR BODIES FOR USE IN TUNNEL DIODE DEVICES WHICH COMPRISES: PROVIDING A GALLIUM ARSENIDE BODY HAVING A CONCENTRATION OF AN IMPURITY SELECTED FROM THE GROUP CONSISTING OF DONORS AND ACCEPTORS GREATER THAN 10**18 ATOMS PER CUBIC CENTIMETER SUCH THAT SAID BODY IS DEGENERATE AND OF ONE-TYPE CONDUCTIVITY, SAID GROUP EXCLUDING COPPER, SILVER AND GOLD; IMMERSING SAID BODY IN A MATERIAL FUSING AT A TEMPERATURE BELOW ABOUT 800*C. AND CAPABLE OF FORMING STABLE COMPOUNDS AND COMPLEXES WITH HARMFUL RAPIDLY DIFFUSING IMPURITIES OF THE CLASS CONSISTING OF COPPER, SILVER AND GOLD IN SAID BODY, SAID MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF CYANIDES, HALIDES AND SULFIDES; AND A HEATING SAID MATERIAL TO A TEMPERATURE ABOVE THE FUSING TEMPERATURE THEREOF FOR AT LEAST 5 HOURS TO REDUE THE CONECNTRATION OF SAID HARMFUL RAPIDLY DIFFUSING IMPURITIES IN SAID BODY TO A VALUE LESS THAN ABOUT 10**15 ATOMS PER CUBIC CENTIMETER.
Claim 2
Independent Claim
151 words
THE METHOD OF MAKING SEMICONDUCTOR BODIES FOR USE IN TUNNEL DIODE DEVICES WHICH COMPRISES: PROVIDING A GALLIUM ARSENIDE BODY HAVING A CONCENTRATION OF AN IMPURITY SELECTED FROM THE GROUP CONSISTING OF DONORS AND ACCEPTORS GREATER THAN 10**18 ATOMS PER CUBIC CENTIMETER SUCH THAT SAID BODY IS DEGENERATE AND OF ONE-TYPE CONDUCTIVITY, SAID GROUP EXCLUDING COPPER, SILVER AND GOLD; IMMERSING SAID BODY IN A MATERIAL FUSING AT A TEMPERATURE BELOW ABOUT 800*C. AND CAPABLE OF FORMING STABLE COMPOUNDS AND COMPLEXES WITH HARMFUL RAPIDLY DIFFUSING IMPURITIES OF THE CLASS CONSISTING OF COPPER, SILVER AND GOLD IN SAID BODY, SAID MATERIAL BEING SELECTED FROM THE GROUP CONSISTING OF CYANIDES, HALIDES AND SULFIDES; AND A HEATING SAID MATERIAL TO A TEMPERATURE ABOVE THE FUSING TEMPERATURE THEREOF FOR AT LEAST 5 HOURS TO REDUE THE CONECNTRATION OF SAID HARMFUL RAPIDLY DIFFUSING IMPURITIES IN SAID BODY TO A VALUE LESS THAN ABOUT 10**15 ATOMS PER CUBIC CENTIMETER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-07-18 | 1970-01-17 | 1970-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-07-18 | 1974-01-17 | 1974-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-07-18 | 1978-01-17 | 1978-07-19 | $7700.00 | Window Closed / Lapsed |