US3261722A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Process for preparing semiconductor ingots within a depression
Assignee: Siemens Schuckertwerke AG
•
Filing: 1963-11-29
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Granted: 1966-07-19
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Expires: 1983-11-29
Abstract
No abstract record available.
Inventors
- 👤 Keller Wolfgang
- 👤 Spenke Eberhard
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 00:57
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/02; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1056
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
METHOD OF PRODUCING A MONOCRYSTALLINE SEMICONDUCTOR MEMBER WHICH COMPRISES FORMING A DEPRESSION IN THE TOP OF A BLOCK OF SEMICONDUCTOR MATERIAL, INDUCTIVELY HEATING THE BOTTOM OF THE DEPRESSION FROM A HEAT SOURCE WITHIN THE DEPRESSION TO A TEMPERATURE AT WHICH A SEMICONDUCTOR MELT IS FORMED IN THE INTERIOR OF THE BLOCK, DRAWING A PORTION OF THE SEMICONDUCTOR MATERIAL OUT OF THE MELT SO THAT IT COOLS AND SOLIDFIES TO A MONOCRYSTALLINE ROD HAVING A DIAMETER GREATER THAN 25 MM., FEEDING A MASS OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL FROM ABOVE THROUGH THE DEPRESSION TO THE MELT AT THE BOTTON OF THE DEPRESSION FOR REPLACING THE PORTION OF SEMICONDUCTOR MATERIAL DRAWN THEREFROM, AND SIMULTANEOUSLY INDUCTIVELY HEATING THE MASS OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL TO ITS MELTING TEMPERATURE AS IT IS BEING FED THROUGH THE DEPRESSION.
Claim 2
Dependent Claim
131 words
METHOD OF PRODUCING A MONOCRYSTALLINE SEMICONDUCTOR MEMBER WHICH COMPRISES FORMING A DEPRESSION IN THE TOP OF A BLOCK OF SEMICONDUCTOR MATERIAL, INDUCTIVELY HEATING THE BOTTOM OF THE DEPRESSION FROM A HEAT SOURCE WITHIN THE DEPRESSION TO A TEMPERATURE AT WHICH A SEMICONDUCTOR MELT IS FORMED IN THE INTERIOR OF THE BLOCK, DRAWING A PORTION OF THE SEMICONDUCTOR MATERIAL OUT OF THE MELT SO THAT IT COOLS AND SOLIDFIES TO A MONOCRYSTALLINE ROD HAVING A DIAMETER GREATER THAN 25 MM., FEEDING A MASS OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL FROM ABOVE THROUGH THE DEPRESSION TO THE MELT AT THE BOTTON OF THE DEPRESSION FOR REPLACING THE PORTION OF SEMICONDUCTOR MATERIAL DRAWN THEREFROM, AND SIMULTANEOUSLY INDUCTIVELY HEATING THE MASS OF POLYCRYSTALLINE SEMICONDUCTOR MATERIAL TO ITS MELTING TEMPERATURE AS IT IS BEING FED THROUGH THE DEPRESSION.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-07-18 | 1970-01-17 | 1970-07-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-07-18 | 1974-01-17 | 1974-07-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-07-18 | 1978-01-17 | 1978-07-19 | $7700.00 | Window Closed / Lapsed |