Solid-state semiconductor network

Claim 1

A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE COMPRISING A WAFER OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL, A PLAURALITY OF CIRCUIT ELEMENTS DEFINED IN THE WAFER ADJACENT ONE MAJOR FACE THEREOF, SAID CIRCUIT ELEMENTS INCLUDING A UNIPOLAR FIELD-EFFECT DEVICE HAVING A THIN CHANNEL REGION AND A GATE REGION PROVIDED BY CONTIGUOUS LAYERS OF SEMICONDUCTOR MATERIAL OF OPPOSITE CONDUCTIVITYTYPES, THE REGION SEPARATING THE CHANNEL REGION INTO A SOURCE AND A DRAIN WHICH ARE CONNECTED TOGETHER WITHIN THE WAFER ONLY BY A THIN PORTION OF THE CHANNEL REGION UNDERLYING THE GATE REGION, VOLTAGE REFERENCE MEANS DEFINED IN THE WAFER ADJACENT SAID ONE MAJOR FACE BY CONTIGUOUS REGIONS OF OPPOSITE CONDUCTIVITY-TYPES, AND MEANS CONNECTING THE VOLTAGE REFERENCE MEANS ACROSS THE SOURCE AND GATE REGION OF THE FIELD-EFFECT DEVICE SO THAT THE CHANNEL REGION OF THE FIELD-EFFECT DEVICE WILL PROVIDE A LARGE RESISTANCE.