Thermoelectric unit and process of using to interconvert heat and electrical energy

Claim 2

AS AN ARTICLE OF MANUFACTURE, A SHAPED BODY COMPRISING A MATRIX OF A SEMICONDUCTOR CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHM-CM. TO 1X10**3 OHM-CM. WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO 1 WATT/CM.*C. AND A SEEBACK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS PER *C. TO 1000 MICROVOLTS PER*C., THE SAID MATRIX HAVING DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX, AND BEING SELECTED FROM THE GROUP CONSISTING OF THE PHOSPHIDES OF BORON, THORIUM, ALUMINUM, MAGNESIUM, CALCIUM,TITANIUM, ZIRCONIUM, TANTALUM, SILICON, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN, COBALT, NICKEL, RHENIU, MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTH OF THE LANTHANIDE AND ACTINIDE SERIES.

Claim 3

PROCESS FOR CONVERTING HEAT INTO ELECRTRICITY WHICH COMPRISES APPLYING HEAT TO A HOT JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS AND HOT JUNCTION ELEMENT FORMING A FIRST THERMOELECTRIC JUNCTION, AT LEAST ONE OF SID LEGS BEING COMPRISED OF A MATRIX OF A LEAST ONE SEMICONDUCTOR CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHMCM. TO 1X10**3 OHM-CM. WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO ONE WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS/*C. TO 1000 MICROVOLTS/*C, THE SAID MATRIX HAVING UNIFORMLY DISPERSED THEREIN A PARTUCULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX SELECTED FROM THE GROUP CONSISTING OF STABLE COMPOUNDS OF THE PHOSPHIDES OF BORON, THORIUM, ALUMINUM, MAGNESIUM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, SILICON, VANADIUM,HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN, COBALT, NICKEL, RHENIUM, MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SAID FIRST AND SECOND LEGS, REMOTE FROM THE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION, AND WITHDRAWING ELECTRICITY FROM SAID COLD JUNCTION.

Claim 4

PROCESS FOR CONVERTING HEAT INTO ELECRTRICITY WHICH COMPRISES APPLYING HEAT TO A HOT JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS AND HOT JUNCTION ELEMENT FORMING A FIRST THERMOELECTRIC JUNCTION, AT LEAST ONE OF SID LEGS BEING COMPRISED OF A MATRIX OF A LEAST ONE SEMICONDUCTOR CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHMCM. TO 1X10**3 OHM-CM. WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO ONE WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS/*C. TO 1000 MICROVOLTS/*C, THE SAID MATRIX HAVING UNIFORMLY DISPERSED THEREIN A PARTUCULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX SELECTED FROM THE GROUP CONSISTING OF STABLE COMPOUNDS OF THE PHOSPHIDES OF BORON, THORIUM, ALUMINUM, MAGNESIUM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, SILICON, VANADIUM,HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN, COBALT, NICKEL, RHENIUM, MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SAID FIRST AND SECOND LEGS, REMOTE FROM THE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION, AND WITHDRAWING ELECTRICITY FROM SAID COLD JUNCTION.

Claim 5

THE PROCESS FOR CONVERTING ELECTRICITY INTO COOLING AND HEATING EFFECTS WHICH COMPIRSES APPLYING ELECTRICITY TO A COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS, AND COLD JUNCTION ELEMENT FOMING A FIRST THERMOELECTRIC JUNCTION AND SAID LEGS AND A HOG JUNCTION FORMING A SECOND THERMOELECTRIC JUNCTION, AT LEAST ONE OF SAID LEGS BEING COMPRISED OF A MATRIX OF AT LEAST ONE SEMICONDUCTOR SEGMENT CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHM.CM. TO 1X10**3 OHM-CM., WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO 1 WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS PER*C. TO 1000 MICROVOLTS PER*C. THE SAID MATRIX HAVING DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX AND BEING SELECTED FROM THE GROUP CONSISTING OF COMPOUNDS OF THE PHOSPHIDES OF BORON, THORIUM, ALUMINUM,MAGNESIUM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, SILICON, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN COBALT, NICKEL, RHENIUM,MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES, THEREBY COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SID FIRST AND SECOND LEGS, REMOTE FROMTHE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION.

Claim 6

THE PROCESS FOR CONVERTING ELECTRICITY INTO COOLING AND HEATING EFFECTS WHICH COMPIRSES APPLYING ELECTRICITY TO A COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH A FIRST LEG, OF P-TYPE CONDUCTIVITY, AND A SECOND LEG, OF N-TYPE CONDUCTIVITY, SAID LEGS, AND COLD JUNCTION ELEMENT FOMING A FIRST THERMOELECTRIC JUNCTION AND SAID LEGS AND A HOG JUNCTION FORMING A SECOND THERMOELECTRIC JUNCTION, AT LEAST ONE OF SAID LEGS BEING COMPRISED OF A MATRIX OF AT LEAST ONE SEMICONDUCTOR SEGMENT CHARACTERIZED BY AN ELECTRICAL RESISTIVITY IN THE RANGE OF 1X10**4 OHM.CM. TO 1X10**3 OHM-CM., WITH A THERMAL CONDUCTIVITY IN THE RANGE OF 1X10**3 TO 1 WATT/CM.*C. AND A SEEBECK COEFFICIENT IN THE RANGE OF 50 MICROVOLTS PER*C. TO 1000 MICROVOLTS PER*C. THE SAID MATRIX HAVING DISPERSED THEREIN A PARTICULATE, SUBSTANTIALLY INSOLUBLE, REFRACTORY, DISPERSED PHASE HAVING AN ABSOLUTE MELTING POINT OF AT LEAST 105% OF THE MELTING POINT OF THE AFORESAID MATRIX, AND HAVING A COEFFICIENT OF EXPANSION GREATER THAN THAT OF THE SAID MATRIX AND BEING SELECTED FROM THE GROUP CONSISTING OF COMPOUNDS OF THE PHOSPHIDES OF BORON, THORIUM, ALUMINUM,MAGNESIUM, CALCIUM, TITANIUM, ZIRCONIUM, TANTALUM, SILICON, VANADIUM, HAFNIUM, COLUMBIUM, TUNGSTEN, IRON, TIN COBALT, NICKEL, RHENIUM,MOLYBDENUM, BERYLLIUM, BARIUM AND RARE EARTHS OF THE LANTHANIDE AND ACTINIDE SERIES, THEREBY COOLING THE COLD JUNCTION ELEMENT IN PHYSICAL AND ELECTRICAL CONTACT WITH SID FIRST AND SECOND LEGS, REMOTE FROMTHE SAID HOT JUNCTION AND FORMING A SECOND THERMOELECTRIC JUNCTION.