Patent US3255392A successfully refreshed from Google Patents.
US3255392A
Expired / Lapsed
US
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Varistor element heat-treated ion radical salts
Assignee: EIDP Inc
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Filing: 1961-02-14
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Granted: 1966-06-07
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Expires: 1981-02-14
Abstract
No abstract record available.
Inventors
- 👤 Wahlig Charles Frederick
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 23:18
CPC Classifications
H; H01; H01C; H01C7/00; H01C7/10; H01C7/105
Claims Analysis
Total Claims: 3
Claim 1
Independent Claim
141 words
A PROCESS FOR PREPARING A SOLID NON-OHMIC SEMICONDUCTOR COMPRISING (A) MELTING AN ION RADICAL SALT UNTIL THE RESOLIDFIED ION RADICAL SALT''S RESISTIVITY HAS BEEN SUBSTANTIALLY INCREASED, SAID ION RADICAL SALT COMPRISED ESSENTIALLY OF CATIONS M+, ANION RADICALS (A), AND MOLECULAR A IN SUCH PROPORTIONS THAT THE AVERAGE SALT STRUCTURE IS ESSENTIALLY M+ (A) P, WHERE M+ IS AN OINUM CATION HAVING A CENTRAL ELEMENT TAKEN FROM GROUPS V AND VI OF THE PERIODIC TABLE AND HAVING AN EFFECTIVE RADIUS OF AT LEAST 3 AND UP TO AND INCLUDING 20 ANGSTROM UNITS; A IS A MEMBER OF THE GROUP CONSISTING OF A TETRACYANOQUINODIMETHAN MOIETY (TCNQ) AND A C1-C8 ALKYL SUBSTITUTED TCHQ, SAID ALKYL SUBSTITUENT ATTACHED TO THE QUINODIMETHAN MOIETY, THE (-) SIGN INDICATING THE ANIONOID CHARACTER OF THE QUINODIMETHAN MOIETY, THE (.) INDICATING THE ODD ELECTION CHARACTER OF SAID SALT TO THE
Claim 2
Dependent Claim
141 words
A PROCESS FOR PREPARING A SOLID NON-OHMIC SEMICONDUCTOR COMPRISING (A) MELTING AN ION RADICAL SALT UNTIL THE RESOLIDFIED ION RADICAL SALT''S RESISTIVITY HAS BEEN SUBSTANTIALLY INCREASED, SAID ION RADICAL SALT COMPRISED ESSENTIALLY OF CATIONS M+, ANION RADICALS (A), AND MOLECULAR A IN SUCH PROPORTIONS THAT THE AVERAGE SALT STRUCTURE IS ESSENTIALLY M+ (A) P, WHERE M+ IS AN OINUM CATION HAVING A CENTRAL ELEMENT TAKEN FROM GROUPS V AND VI OF THE PERIODIC TABLE AND HAVING AN EFFECTIVE RADIUS OF AT LEAST 3 AND UP TO AND INCLUDING 20 ANGSTROM UNITS; A IS A MEMBER OF THE GROUP CONSISTING OF A TETRACYANOQUINODIMETHAN MOIETY (TCNQ) AND A C1-C8 ALKYL SUBSTITUTED TCHQ, SAID ALKYL SUBSTITUENT ATTACHED TO THE QUINODIMETHAN MOIETY, THE (-) SIGN INDICATING THE ANIONOID CHARACTER OF THE QUINODIMETHAN MOIETY, THE (.) INDICATING THE ODD ELECTION CHARACTER OF SAID SALT TO THE
Claim 3
Dependent Claim
39 words
A SOLID NON-OHMIC SEMICONDUCTOR PREPARED BY THE PROCESS OF CLAIM 1, SAID SEMEICAONDUTOR BEING CHARACTERIZED AS HAVING A THRESHOLD VOLTAGE OF 0.2 TO 1 VOLT AND A NON-OHMIC RANGE OF FROM ABOVE SAID THRESHOLD VOLTAGE TO ABOUT 10 VOLTS.
References Cited (Backward Citations)
US2669666A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-06-06 | 1969-12-06 | 1970-06-07 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-06-06 | 1973-12-06 | 1974-06-07 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-06-06 | 1977-12-06 | 1978-06-07 | $7700.00 | Window Closed / Lapsed |