US3245848A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for making a gallium arsenide transistor
Assignee: Raytheon Co
•
Filing: 1963-07-11
•
Granted: 1966-04-12
•
Expires: 1983-07-11
Abstract
No abstract record available.
Inventors
- 👤 Vaux Lloyd H De
- 👤 Stopek Simon
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 22:26
CPC Classifications
H; H10; H10D; H10D99/00; C; C30; C30B; C30B31/00; C30B31/04; H10D62/00; H10D62/80; H10D62/85; H10D62/854; H10P; H10P95/00; Y; Y10; Y10S; Y10S438/00; Y10S438/914; Y10S438/918
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
54 words
A METHOD FOR FABRICATING A GALLIUM ARSENIDE TRANSISTOR WHICH COMPRISES: ALLOYING A BUTTON OF TIN MAGANESE TO AN N-TYPE CRYSTAL OF GALLIUM ARSENIDE IN AN INERT ATMOSPHERE, SUBJECTING THE ALLOYED STRUCTURE TO A DIFFUSION STEP AT ABOUT 950*C. TO DIFFUSE MANGANESE INTO SAID CRYSTAL; COOLING SAID SYSTEM TO FORM AN ALLOY REGROWN CRYSTAL REGION
Claim 2
Independent Claim
54 words
A METHOD FOR FABRICATING A GALLIUM ARSENIDE TRANSISTOR WHICH COMPRISES: ALLOYING A BUTTON OF TIN MAGANESE TO AN N-TYPE CRYSTAL OF GALLIUM ARSENIDE IN AN INERT ATMOSPHERE, SUBJECTING THE ALLOYED STRUCTURE TO A DIFFUSION STEP AT ABOUT 950*C. TO DIFFUSE MANGANESE INTO SAID CRYSTAL; COOLING SAID SYSTEM TO FORM AN ALLOY REGROWN CRYSTAL REGION
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-04-11 | 1969-10-11 | 1970-04-12 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-04-11 | 1973-10-11 | 1974-04-12 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-04-11 | 1977-10-11 | 1978-04-12 | $7700.00 | Window Closed / Lapsed |