Method of preparing thin films on substrates by an electrical discharge

Claim 1

A METHOD FOR THE MANUFACTURE OF A THIN AND UNIFORM FILM OF AN INORGANIC CHEMICAL COMPOUND INCLUDING THE STEPS OF PREPARING A MIXTURE OF VOLATILE GASES SELECTED FROM THE GROUP CONSISTING OF INORGANIC GASES AND ORGANOMETALLIC GASES CONTAINING THE SEVERAL ELEMENTS OF SAID CHEMICAL COMPOUND IN AN EVACUATED CHAMBER, WITH CONTROLLED PARTIAL PRESSURES IN RATRIOS DETERMINED BY THE STOICHIMETRY OF SAID CHEMICAL COMPOUND AND TOTALLING LESS THAN 10 MM. OF MERCURY AND IN THE PRESENCE OF A SUBSTRATE WHICH PROVIDES A FILM-DEPOSITION AREA, INITIATING A NON-ARCING ELECTRICAL DISCHARGE IN SAID CHAMBER IN THE REGION OF SAID SUBSTRATE WHICH DISCHARGE IS SUBSTANTIALLY UNIFORM OVER SAID FILM-DEPOSITION AREA, AND CONTINUING SAID DISCHARGE UNTIL A THIN AND UNIFORM FILM OF A DESIRED THICKNESS IS FORMED ON SAID FILM-DEPOSITION AREA OF SAID SUBSTRATE.

Claim 2

A METHOD FOR THE MANUFACTURE OF A THIN AND UNIFORM FILM OF AN INORGANIC CHEMICAL COMPOUND INCLUDING THE STEPS OF PREPARING A MIXTURE OF VOLATILE GASES SELECTED FROM THE GROUP CONSISTING OF INORGANIC GASES AND ORGANOMETALLIC GASES CONTAINING THE SEVERAL ELEMENTS OF SAID CHEMICAL COMPOUND IN AN EVACUATED CHAMBER, WITH CONTROLLED PARTIAL PRESSURES IN RATRIOS DETERMINED BY THE STOICHIMETRY OF SAID CHEMICAL COMPOUND AND TOTALLING LESS THAN 10 MM. OF MERCURY AND IN THE PRESENCE OF A SUBSTRATE WHICH PROVIDES A FILM-DEPOSITION AREA, INITIATING A NON-ARCING ELECTRICAL DISCHARGE IN SAID CHAMBER IN THE REGION OF SAID SUBSTRATE WHICH DISCHARGE IS SUBSTANTIALLY UNIFORM OVER SAID FILM-DEPOSITION AREA, AND CONTINUING SAID DISCHARGE UNTIL A THIN AND UNIFORM FILM OF A DESIRED THICKNESS IS FORMED ON SAID FILM-DEPOSITION AREA OF SAID SUBSTRATE.