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US3235945A Expired / Lapsed US ⏱️ 0.0 years remaining

Connection of semiconductor elements to thin film circuits using foil ribbon

Assignee: Lanteris Space LLC
•
Filing: 1962-10-09
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Granted: 1966-02-22
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Expires: 1982-10-09
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Abstract

Abstract 1,060,397. Semi-conductor devices. PHILCO CORPORATION. Oct. 9, 1963 [Oct. 9, 1962], No. 39792/63. Heading H1K. A semi-conductor element is connected to a contact area of a thin film circuit by attaching the element to a metal lamina which overlaps it at least two edges and bonding at least the overlapping parts to the contact area. Typically silicon transistors or diodes are bonded at spaced intervals to a metal ribbon. The ribbon may be of gold doped with donor or acceptor so as to form an ohmic contact when bonded to the silicon by heating to the silicongold eutectic temperature or by soldering. Elements each with extending portions of ribbon, subdivided from this, are attached by spot welding, ultrasonically welding, thermocompression bonding, or soldering the extending portions to contact lands on a thin-film circuit, Fig. 2, formed by the method described in Specification 1,060,398. The elements are then connected into the circuit by thermocompression bonding gold or aluminium wires such as 18 to zones of the element and contact lands on the circuit.

Inventors

  • 👤 Jr John Alexander Hall
  • 👤 Thomas V Sikina

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-26 17:23
CPC Classifications
H; H10; H10W; H10W72/00; H10W72/071; H10W72/075; H10W72/50; H10W72/90; H10W72/07531; H10W72/07532; H10W72/07533; H10W72/07541; H10W72/531; H10W72/533; H10W72/534; H10W72/536; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/5524; H10W72/59; H10W72/851; H10W72/874; H10W72/884; H10W72/921; H10W72/923; H10W72/951; H10W72/952; H10W90/00; H10W90/701; H10W90/751; H10W90/754

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 86 words
A METHOD OF INTERCONNECTING A SEMICONDUCTOR ELEMENT HAVING AT LEAST ONE SUBSTANTIALLY FLAT SURFACE AND A THIN FILM PASSIVE CIRCUIT HAVING AT LEAST ONE FLAT CONTACT LAND COMPRISING THE STEPS OF: (A) BONDING ONE FACE OF A METALLIC RIBBON TO THE FLAT SURFACE OF SAID SEMICONDUCTOR ELEMENT SO THAT SEGMENTS OF THE RIBBON PROTUDE BEYOND EDGES OF SAID SURFACE, AND (B) PLACING THE OTHER FACE OF SAID RIBBON ADJACENT SAID LAND CONTACT AREA AND BONDING THE EXTENDING SEGMENTS THEREOF TO SAID LAND CONTACT BY ULTRASONIC WELDING.
Claim 2
Independent Claim 86 words
A METHOD OF INTERCONNECTING A SEMICONDUCTOR ELEMENT HAVING AT LEAST ONE SUBSTANTIALLY FLAT SURFACE AND A THIN FILM PASSIVE CIRCUIT HAVING AT LEAST ONE FLAT CONTACT LAND COMPRISING THE STEPS OF: (A) BONDING ONE FACE OF A METALLIC RIBBON TO THE FLAT SURFACE OF SAID SEMICONDUCTOR ELEMENT SO THAT SEGMENTS OF THE RIBBON PROTUDE BEYOND EDGES OF SAID SURFACE, AND (B) PLACING THE OTHER FACE OF SAID RIBBON ADJACENT SAID LAND CONTACT AREA AND BONDING THE EXTENDING SEGMENTS THEREOF TO SAID LAND CONTACT BY ULTRASONIC WELDING.

References Cited (Backward Citations)

US2757324A Cited
US2946119A Cited
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USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1969-02-21 1969-08-23 1970-02-22 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1973-02-21 1973-08-23 1974-02-22 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1977-02-21 1977-08-23 1978-02-22 $7700.00 Window Closed / Lapsed

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