Method of manufacturing semiconductor devices

Claim 1

A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING FUSING A MASS OF AN ALLOYING MATERIAL AT A SURFACE OF A SEMICONDUCTIVE BODY IN THE PRESENCE OF A FIRST GREGATING IMPURITY OF ONE-DETERMINING TYPE OF CONDUCTIVITY AND A SECOND DIFFUSING IMPURITYOF THE OPPOSITE-DETERMINING TYPE OF CONDUCTIVITY AT A FIRST LOWER TEMPERATURE UNTIL A HOMOGENOUS MOLTEN ZONE IS PRODUCED AND A LIQUID-SOLID INTERFACE AT A CERTAIN DEPTH WITHIN THE BODY, SAID DIFFUSING IMPURITY DIFFUSING INTO THE UNDERLYING BODY PORTIONS TO ESTABLISH IN ADVANCE OF THE LIQUID-SOLID INTERFACE A DIFFUSION FRONT ADVANCING INTO THE BODY AT A RATE DEPENDENT UPON THE PREVAILING TEMPERATURE, THEREAFTER HEATING TO A SECOND SUBSTANTIALLY HIGHER TEMPERATURE AT A SUFFICIENTLY RAPID HEATING RATE AT WHICH THE LIQUID-SOLID INTERFACE ADVANCES INTO THE BODY AT A RATE FASTER THAN THAT AT WHICH THE DIFFUSION FRONT ADVANCES INTO THE BODY AT SAID SECOND TEMPERATURE AND UNTIL SAID LIQUID-SOLID INTERFACE CATCHES UP TO THE SAID DIFFUSION FRONT, AND TEHREAFTER COOLING BY REDUCING THE TEMPERATURE TO A LOWER THIRD VALUE UNTIL FURTHER DIFFUSION EFFECTIVELY CEASES AND THEMELT SOLIDIFIES FORMING A RECRYSTALLIZED ZONE DOMINATED BY SAID ONE-DETERMINING IMPURITY AND OF SAID ONE CONDUCTIVITY TYPE ADJACENT TO A THIN DIFFUSED REGION DOMINATED BY SAID OPPOSITE-DETERMINING IMPURITY AND OF SAID OPPOSITE CONDUCTIVITY TYPE AND WHOSE THICKNESS ADJACENT TO THE DEEPEST PENETRATION OF THE LIQUID-SOLID INTERFACE IS PRIMARILY DETERMINED BY THE DURATION OF THE COOLING STEP.

Claim 2

A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE, COMPRISING FUSING A MASS OF AN ALLOYING MATERIAL AT A SURFACE OF A SEMICONDUCTIVE BODY IN THE PRESENCE OF A FIRST GREGATING IMPURITY OF ONE-DETERMINING TYPE OF CONDUCTIVITY AND A SECOND DIFFUSING IMPURITYOF THE OPPOSITE-DETERMINING TYPE OF CONDUCTIVITY AT A FIRST LOWER TEMPERATURE UNTIL A HOMOGENOUS MOLTEN ZONE IS PRODUCED AND A LIQUID-SOLID INTERFACE AT A CERTAIN DEPTH WITHIN THE BODY, SAID DIFFUSING IMPURITY DIFFUSING INTO THE UNDERLYING BODY PORTIONS TO ESTABLISH IN ADVANCE OF THE LIQUID-SOLID INTERFACE A DIFFUSION FRONT ADVANCING INTO THE BODY AT A RATE DEPENDENT UPON THE PREVAILING TEMPERATURE, THEREAFTER HEATING TO A SECOND SUBSTANTIALLY HIGHER TEMPERATURE AT A SUFFICIENTLY RAPID HEATING RATE AT WHICH THE LIQUID-SOLID INTERFACE ADVANCES INTO THE BODY AT A RATE FASTER THAN THAT AT WHICH THE DIFFUSION FRONT ADVANCES INTO THE BODY AT SAID SECOND TEMPERATURE AND UNTIL SAID LIQUID-SOLID INTERFACE CATCHES UP TO THE SAID DIFFUSION FRONT, AND TEHREAFTER COOLING BY REDUCING THE TEMPERATURE TO A LOWER THIRD VALUE UNTIL FURTHER DIFFUSION EFFECTIVELY CEASES AND THEMELT SOLIDIFIES FORMING A RECRYSTALLIZED ZONE DOMINATED BY SAID ONE-DETERMINING IMPURITY AND OF SAID ONE CONDUCTIVITY TYPE ADJACENT TO A THIN DIFFUSED REGION DOMINATED BY SAID OPPOSITE-DETERMINING IMPURITY AND OF SAID OPPOSITE CONDUCTIVITY TYPE AND WHOSE THICKNESS ADJACENT TO THE DEEPEST PENETRATION OF THE LIQUID-SOLID INTERFACE IS PRIMARILY DETERMINED BY THE DURATION OF THE COOLING STEP.