Patent US3232799A successfully refreshed from Google Patents.
US3232799A
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Method of determining the thickness of epitaxially deposited layers of material
Assignee: General Electric Co
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Filing: 1962-08-02
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Granted: 1966-02-01
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Expires: 1982-08-02
Abstract
No abstract record available.
Inventors
- 👤 William C Dash
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 12:34
CPC Classifications
G; G01; G01B; G01B5/00; G01B5/02; G01B5/06; H; H10; H10P; H10P95/00; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/115
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
136 words
THE METHOD OF DETERMINING THE THICKNESS OF A LAYER OF AN EPITAXIALLY DEPOSITED MATERIAL WHICH FORMS STACKING FAULTS IN ONLY ONE SET OF EQUIVALENT CRYSTALLOGRAPHIC PLANES WHICH COMPRISES: ARTIFICIALLY PRODUCING PREDETERMINED SURFACE IMPERFECTIONS FOR NUCLEATING STACKING FAULTS IN SAID EPITAXIALLY DEPOSITED LAYER AT AT LEAST ONE REGION OF THE SURFACE OF THE SUBSTRATE UPON WHICH SAID LAYER IS DEPOSITED; EPITAXIALLY DEPOSITING SAID LAYER SO AS TO NUCLEATE AND GROW STACKING FAULTS THEREIN, SAID STACKING FAULTS BEING CHARACTERISTIC OF THE CRYSTALLOGRAPHIC ORIENTATION OF SAID SUBSTRATE; AND MEASURING THE LENGTH OF THE LINE OF INTERSECTION OF THE STACKING FAULTS APPEARING ON THE SURFACE OF SAID EPITAXIALLY DEPOSITED LAYER TO DETERMINE THE THICKNESS OF SAID LAYER BY UTILIZING THE CHARACTERISTIC RELATIONSHIP BETWEEN THE LENGTH OF THE LINE OF INTERSECTION OF SAID STACKING FAULT TO THE DISTANCE TO ITS ORIGIN.
Claim 2
Independent Claim
136 words
THE METHOD OF DETERMINING THE THICKNESS OF A LAYER OF AN EPITAXIALLY DEPOSITED MATERIAL WHICH FORMS STACKING FAULTS IN ONLY ONE SET OF EQUIVALENT CRYSTALLOGRAPHIC PLANES WHICH COMPRISES: ARTIFICIALLY PRODUCING PREDETERMINED SURFACE IMPERFECTIONS FOR NUCLEATING STACKING FAULTS IN SAID EPITAXIALLY DEPOSITED LAYER AT AT LEAST ONE REGION OF THE SURFACE OF THE SUBSTRATE UPON WHICH SAID LAYER IS DEPOSITED; EPITAXIALLY DEPOSITING SAID LAYER SO AS TO NUCLEATE AND GROW STACKING FAULTS THEREIN, SAID STACKING FAULTS BEING CHARACTERISTIC OF THE CRYSTALLOGRAPHIC ORIENTATION OF SAID SUBSTRATE; AND MEASURING THE LENGTH OF THE LINE OF INTERSECTION OF THE STACKING FAULTS APPEARING ON THE SURFACE OF SAID EPITAXIALLY DEPOSITED LAYER TO DETERMINE THE THICKNESS OF SAID LAYER BY UTILIZING THE CHARACTERISTIC RELATIONSHIP BETWEEN THE LENGTH OF THE LINE OF INTERSECTION OF SAID STACKING FAULT TO THE DISTANCE TO ITS ORIGIN.
References Cited (Backward Citations)
US3041226A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-01-31 | 1969-08-02 | 1970-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-01-31 | 1973-08-02 | 1974-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-01-31 | 1977-08-02 | 1978-02-01 | $7700.00 | Window Closed / Lapsed |