Patent US2838370A successfully refreshed from Google Patents.
Patent US3232745A successfully refreshed from Google Patents.
US3232745A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Producing rod-shaped semiconductor crystals
Assignee: Siemens and Halske AG
•
Filing: 1960-12-05
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Granted: 1966-02-01
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Expires: 1980-12-05
Abstract
No abstract record available.
Inventors
- 👤 Rummel Theodor
- 👤 Kniepkamp Heinrich
- 👤 Emeis Reiner
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-31 15:31
CPC Classifications
C; C30; C30B; C30B11/00; C30B11/04; C30B11/08; C30B11/12; C30B11/005; C30B13/00; C30B13/16; C30B13/22; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/906; Y10S117/912; Y10S117/917
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
122 words
A METHOD OF PRODUCTING ROD-SHAPED SEMICONDUCTOR CRYSTALS, COMPRISING THE STEPS OF DISPOSING IN A SUITABLE REACTION VESSEL A SOLID ROD-SHAPED BODY MADE OF THE SEMICONDUCTOR SUBSTANCE WHICH IS TO BE PRODUCED SO AS TO EXTEND VERTICALLY THEREIN, APPLYING AN ENERGY SOURCE TO EFFECT MELTING A PORTION OF SAID ROD SO AS TO FORM AT THE LOWER END THEREOF A MELT WHICH DEPENDS DOWNWARDLY THEREFROM IN THE MANNER OF A DROP, CONDUCTING TO SAID MELT A REACTION GAS WHICH CONTAINS COMPONENTS OF THE SEMICONDUCTOR SUBSTANCE TO BE PRODUCED SO AS TO EFFECT DECOMPOSITION OF SAID GAS AND CONSEQUENTLY SEPARATION THEREFROM OF SAID SEMICONDUCTOR SUBSTANCE, SAID SEPARATED SEMICONDUCTOR SUBSTANCE PRECIPITATING ON SAID MELT, AND MOVING SAID ROD UPWARDLY AT A SPEED ADJUSTED TO THE
Claim 2
Independent Claim
122 words
A METHOD OF PRODUCTING ROD-SHAPED SEMICONDUCTOR CRYSTALS, COMPRISING THE STEPS OF DISPOSING IN A SUITABLE REACTION VESSEL A SOLID ROD-SHAPED BODY MADE OF THE SEMICONDUCTOR SUBSTANCE WHICH IS TO BE PRODUCED SO AS TO EXTEND VERTICALLY THEREIN, APPLYING AN ENERGY SOURCE TO EFFECT MELTING A PORTION OF SAID ROD SO AS TO FORM AT THE LOWER END THEREOF A MELT WHICH DEPENDS DOWNWARDLY THEREFROM IN THE MANNER OF A DROP, CONDUCTING TO SAID MELT A REACTION GAS WHICH CONTAINS COMPONENTS OF THE SEMICONDUCTOR SUBSTANCE TO BE PRODUCED SO AS TO EFFECT DECOMPOSITION OF SAID GAS AND CONSEQUENTLY SEPARATION THEREFROM OF SAID SEMICONDUCTOR SUBSTANCE, SAID SEPARATED SEMICONDUCTOR SUBSTANCE PRECIPITATING ON SAID MELT, AND MOVING SAID ROD UPWARDLY AT A SPEED ADJUSTED TO THE
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1969-01-31 | 1969-08-02 | 1970-02-01 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1973-01-31 | 1973-08-02 | 1974-02-01 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1977-01-31 | 1977-08-02 | 1978-02-01 | $7700.00 | Window Closed / Lapsed |