High frequency power transistor

Claim 1

A PLANAR POWER TRANSISTOR CAPABLE OF READILY DISSIPATING HEAT GENERATED BY CURRENT PASSING THERETHROUGH COMPRISING: A MONOCRYSTALLINE WAFER OF SEMICONDUCTOR MATERIAL HAVING A FLAT SURFACE, AND HAVING FORMED THEREIN A COLLECTOR REGION OF ONE CONDUCTIVITY TYPE, A PLURALITY OF BASE SUBREGIONS OF THE OPPOSITE CONDUCTIVITY TYPE FROM SAID COLLECTOR REGION FORMED WITHIN SAID COLLECTOR REGION AND EXTENDING TO SAID FLAT SURFACE, EACH OF SAID BASE SUBREGIONS BEING SEPARATED LATERALLY FROM THE OTHERS BY A DISTANCE AT LEAST EQUAL TO THE THICKNESS OF SAID WAFER, THEREBY REDUCING THE THERMAL COUPLING BETWEEN SAID SUBREGIONS, A PLURALITY OF EMITTER SUBREGIONS OF SAID ONE CONDUCTIVITY TYPE, AT LEAST ONE FORMED WITHIN EACH OF SAID BASE SUBREGIONS AND EXTENDING TO SAID FLAT SURFACE; AN INSULATING COATING ON AT LEAST PART OF SAID SURFACE; MEANS OHMICALLY COLLECTIVELY CONNECTING SAID BASE SUBREGIONS, SAID MEANS COMPRISING METALLIZED INTERCONNECTIONS DEPOSITED UPON SAID INSULATING COATING EXCEPT WHERE THEY MAKE OHMIC CONNECTION WITH SAID BASE SUBREGIONS, SAID COATING PREVENTING CONTACT OF SAID METALLIZED INTERCONNECTIONS WITH THE REGIONS AND SUBREGIONS OF SAID TRANSISTOR OTHER THAN SAID BASE SUBREGIONS; AND MEANS OHMICALLY COLLECTIVELY CONNECTING SAID EMITTER SUBREGIONS, SAID MEANS COMPRISING METALLIZED INTERCONNECTIONS DEPOSITED UPON SAID INSULATING COATING EXCEPT WHERE THEY MAKE OHMIC CONNECTION WITH SAID EMITTER SUBREGIONS, SAID COATING PREVENTING CONTACT WITH THE REGIONS AND SUBREGIONS OF SAID TRANSISTOR OTHER THAN SAID EMITTER SUBREGIONS.