Patent US3221220A successfully refreshed from Google Patents.
US3221220A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Low capacitance semiconductor junction
Assignee: NEC Corp
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Filing: 1961-07-25
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Granted: 1965-11-30
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Expires: 1981-07-25
Abstract
No abstract record available.
Inventors
- 👤 Hayashi Teruo
- 👤 Watanabe Hisashi
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-04 13:42
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/60; H10D62/10; H10D8/00; H10D8/70; H10D99/00; H10P; H10P95/00; H10P95/50
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
163 words
A LOW CAPACITANCE SEMICONDUCTOR JUNCTION STRUCTURE COMPRISING A SEMICONDUCTOR MATERIAL CONTAINING A FIRST REGION HAVING A RELATIVELY HIGH CONCENTRATION OF A FIRST TYPE OF IMPURITY, A SECOND REGION ADJACENT TO SAID FIRST REGION AND FORMING A GENERALLY PLANAR BOUNDARY THEREWITH, SAID SECOND REGION HAVING A RELATIVELY LOW CONCENTRATION OF SAID FIRST TYPE IMPURITY, A THIRD REGION ADJACENT TO SAID FIRST AND SECOND REGIONS, AND THIRD REGION HAVING A RELATIVELY HIGH CONCENTRATION OF A SECOND TYPE OF IMPURITY, A LOW CAPACITANCE JUNCTION BEING DEFINED BY THE BOUNDARY SEPARATING SAID THIRD REGION FROM THE SAID FIRST AND SECOND REGIONS, SAID THIRD REGION PRODUCING A JUNCTION IN WHICH A PREDETERMINED RATIO EXISTS BETWEEN THE BOUNDARY AREA SEPARATING SAID THIRD REGION FROM SAID FIRST REGION AND THE BOUNDARY AREA SEPARATING SAID THIRD REGION FROM SAID SECOND REGION, TO PROVIDE A REDUCED JUNCTION CAPACITANCE, ONE OF SAID BOUNDARY AREAS ALSO BEING OF GENERALLY PLANAR SHAPE ANS BEING DISPOSED IN ANGULAR RELATION WITH RESPECT TO SAID GENERALLY PLANAR BOUNDARY.
Claim 2
Dependent Claim
163 words
A LOW CAPACITANCE SEMICONDUCTOR JUNCTION STRUCTURE COMPRISING A SEMICONDUCTOR MATERIAL CONTAINING A FIRST REGION HAVING A RELATIVELY HIGH CONCENTRATION OF A FIRST TYPE OF IMPURITY, A SECOND REGION ADJACENT TO SAID FIRST REGION AND FORMING A GENERALLY PLANAR BOUNDARY THEREWITH, SAID SECOND REGION HAVING A RELATIVELY LOW CONCENTRATION OF SAID FIRST TYPE IMPURITY, A THIRD REGION ADJACENT TO SAID FIRST AND SECOND REGIONS, AND THIRD REGION HAVING A RELATIVELY HIGH CONCENTRATION OF A SECOND TYPE OF IMPURITY, A LOW CAPACITANCE JUNCTION BEING DEFINED BY THE BOUNDARY SEPARATING SAID THIRD REGION FROM THE SAID FIRST AND SECOND REGIONS, SAID THIRD REGION PRODUCING A JUNCTION IN WHICH A PREDETERMINED RATIO EXISTS BETWEEN THE BOUNDARY AREA SEPARATING SAID THIRD REGION FROM SAID FIRST REGION AND THE BOUNDARY AREA SEPARATING SAID THIRD REGION FROM SAID SECOND REGION, TO PROVIDE A REDUCED JUNCTION CAPACITANCE, ONE OF SAID BOUNDARY AREAS ALSO BEING OF GENERALLY PLANAR SHAPE ANS BEING DISPOSED IN ANGULAR RELATION WITH RESPECT TO SAID GENERALLY PLANAR BOUNDARY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-11-29 | 1969-05-31 | 1969-11-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-11-29 | 1973-05-31 | 1973-11-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-11-29 | 1977-05-31 | 1977-11-30 | $7700.00 | Window Closed / Lapsed |