US3217401A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of attaching metallic heads to silicon layers of semiconductor devices
Assignee: Transitron Electronic Corp
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Filing: 1962-06-08
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Granted: 1965-11-16
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Expires: 1982-06-08
Abstract
No abstract record available.
Inventors
- 👤 Loring C White
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 07:47
CPC Classifications
H; H10; H10P; H10P95/00; H10W; H10W72/00; H10W72/071; H10W72/0711; H10W72/07118; H10W72/075; H10W72/07551; H10W72/07554; H10W72/50; H10W72/531; H10W72/5363; H10W72/551; H10W72/552; H10W72/5522; H10W72/59; H10W72/90; H10W72/941; H10W72/944; H10W72/951; H10W72/952; Y; Y10; Y10S; Y10S148/00; Y10S148/033; Y10S228/00; Y10S228/903
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
114 words
A METHOD OF ATTACHING A CONDUCTIBE METALLIC LEAD TO A SILICON LAYER OF A SEMICONDUCTIVE DEVICE, SAID METHOD COMPRISING. COATING A PORTION OF SAID METALLIC LEAD WITH A LAYER OF ALUMINIUM HAVING A THICKNESS BETWEEN APPROXIMATELY 200 AND 5,000 ANGSTOMS, THE METAL OF SAID METALLIC LEAD SUBSTAMTIALLY CONSISTING OF A METAL SELECTED FROM THE GROUP CONSISTING OF PLATINUM, NICKEL AND COPPER, COMPRESSING SAID ALUMINUM COATED PORTION AGAINST A SURFACE OF SAID SILICON LAYER OVER A CONTACT AREA OF LESS THAN 800 SQUARE MILS WHILE SIMULTANEOUSLY HEATING SAID ALUMINUM COATED PORTION TO A TEMPERATURE BETWEEN APPROXIMATELY 400*C. AND 577*C. TO FORM A MECHANICALLY STRONG AND LOW OHMIC BOND BETWEEN SAID LEAD AND SAID SILICON LAYER.
Claim 2
Independent Claim
114 words
A METHOD OF ATTACHING A CONDUCTIBE METALLIC LEAD TO A SILICON LAYER OF A SEMICONDUCTIVE DEVICE, SAID METHOD COMPRISING. COATING A PORTION OF SAID METALLIC LEAD WITH A LAYER OF ALUMINIUM HAVING A THICKNESS BETWEEN APPROXIMATELY 200 AND 5,000 ANGSTOMS, THE METAL OF SAID METALLIC LEAD SUBSTAMTIALLY CONSISTING OF A METAL SELECTED FROM THE GROUP CONSISTING OF PLATINUM, NICKEL AND COPPER, COMPRESSING SAID ALUMINUM COATED PORTION AGAINST A SURFACE OF SAID SILICON LAYER OVER A CONTACT AREA OF LESS THAN 800 SQUARE MILS WHILE SIMULTANEOUSLY HEATING SAID ALUMINUM COATED PORTION TO A TEMPERATURE BETWEEN APPROXIMATELY 400*C. AND 577*C. TO FORM A MECHANICALLY STRONG AND LOW OHMIC BOND BETWEEN SAID LEAD AND SAID SILICON LAYER.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-11-15 | 1969-05-17 | 1969-11-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-11-15 | 1973-05-17 | 1973-11-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-11-15 | 1977-05-17 | 1977-11-16 | $7700.00 | Window Closed / Lapsed |