Patent US3212940A successfully refreshed from Google Patents.
US3212940A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for producing p-i-n semiconductors
Assignee: Individual
•
Filing: 1963-03-06
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Granted: 1965-10-19
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Expires: 1983-03-06
Abstract
No abstract record available.
Inventors
- 👤 James L Blankenship
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-05 10:40
CPC Classifications
H; H10; H10P; H10P95/00; G; G21; G21C; G21C1/00; G21C1/04; G21C1/06; G21C1/07; G21C19/00; G21C19/20; G21C19/202; G21C7/00; G21C7/06; G21C7/08; G21C7/12; H10D; H10D99/00; H10P32/00; H10P32/10; H10P32/185; Y; Y02; Y02E; Y02E30/00; Y02E30/30; Y10; Y10S; Y10S148/00; Y10S148/033; Y10S438/00; Y10S438/912; Y10T; Y10T74/00; Y10T74/20; Y10T74/20396; Y10T74/20402
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
138 words
A METHOD OF MAKING A RECTIFYING SEMICONDUCTOR COMPRISING THE STEPS OF HEATING A WAFER OF SILICON IN AN ATMOSPHERE OF PHOSPHOROUS TO DEPOSIT A THIN COAT OF PHOSPHOROUS DOPE THEREON, STRIPPING THE DOPE FROM ONE FACE OF THE WAFER AND APPLYING AN ALUMINUM COATING THEREON, BONDING THE ALUMINUM TO THE SILICON, DEPOSITING A PREDETERMINED QUANTITY OF LITHIUM UNDER VACUUM ON THE PHOSPHOROUS DOPED LAYER ON THE OPPOSITE FACE OF THE WAFER, APPLYING SUFFICIENT HEAT TO ALLOY WITH THE PHOSPHOROUS AND DIFFUSE THE LITHIUM THROUGH THE DOPED LAYER AND INTO THE SILICON, AND MAINTAINING THE TEMPERATURE OF THE WAFER CONSTANT WHILE APPLYING A REVERSE BIAS TO THE WAFER FOR A PERIOD OF SEVERAL DAYS TO DRIFT THE LITHIUM IONS ACROSS THE WAFER TO A PREDETERMINED DEPTH AND CONCENTRATION TO FORM AN INTRINIC LAYER BETWEEN THE P AND N LAYERS.
Claim 2
Independent Claim
138 words
A METHOD OF MAKING A RECTIFYING SEMICONDUCTOR COMPRISING THE STEPS OF HEATING A WAFER OF SILICON IN AN ATMOSPHERE OF PHOSPHOROUS TO DEPOSIT A THIN COAT OF PHOSPHOROUS DOPE THEREON, STRIPPING THE DOPE FROM ONE FACE OF THE WAFER AND APPLYING AN ALUMINUM COATING THEREON, BONDING THE ALUMINUM TO THE SILICON, DEPOSITING A PREDETERMINED QUANTITY OF LITHIUM UNDER VACUUM ON THE PHOSPHOROUS DOPED LAYER ON THE OPPOSITE FACE OF THE WAFER, APPLYING SUFFICIENT HEAT TO ALLOY WITH THE PHOSPHOROUS AND DIFFUSE THE LITHIUM THROUGH THE DOPED LAYER AND INTO THE SILICON, AND MAINTAINING THE TEMPERATURE OF THE WAFER CONSTANT WHILE APPLYING A REVERSE BIAS TO THE WAFER FOR A PERIOD OF SEVERAL DAYS TO DRIFT THE LITHIUM IONS ACROSS THE WAFER TO A PREDETERMINED DEPTH AND CONCENTRATION TO FORM AN INTRINIC LAYER BETWEEN THE P AND N LAYERS.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-10-18 | 1969-04-19 | 1969-10-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-10-18 | 1973-04-19 | 1973-10-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-10-18 | 1977-04-19 | 1977-10-19 | $7700.00 | Window Closed / Lapsed |