Patent US3528166A successfully refreshed from Google Patents.
Patent US3210165A successfully refreshed from Google Patents.
← Back to Patent Explorer
US3210165A Expired / Lapsed US ⏱️ 0.0 years remaining

Zone-melting treatment of semiconductive materials

Assignee: US Philips Corp
•
Filing: 1961-12-29
•
Granted: 1965-10-05
•
Expires: 1981-12-29
📄 Original PDF 🌐 Google Patents 🔄 Sync Now

Abstract

No abstract record available.

Inventors

  • 👤 Adrianus Martinus Jac Gerardus
  • 👤 Steinemann Adolf

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-10-29 18:56
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/10; C30B29/40; C30B29/42; C22; C22B; C22B41/00; C22F; C22F1/00; C22F1/16; C30B11/00; C30B13/00; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S117/911

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 168 words
A METHOD OF ZONE-MELTING A SEMICONDUCTIVE MATERIAL IN A CLOSED ENVIRONMENT IN WHICH MAY BE PRESENT UNDESIRABLE IMPURITIES WHICH TEND TO COMBINE WITH THE SEMICONDUCTIVE MATERIAL WHEN THE LATTER IS MELTED, COMPRISING PROVIDING IN THE SAID CLOSED ENVIRONMENT A QUANTITY OF SAID MATERIAL TO BE SUBJECTED TO THE SAID ZONE-MELTING IN THE FORM OF AN ELONGATED CHARGE, FIRST MELTING A ZONE OF THE CHARGE CONFINED TO ONE END OF THE CHARGE SO THAT COMBINATION WITH THE UNDESIRABLE IMPURITIES OCCURS UNTIL THE SAID UNDESIRABLE IMPURITIES IN THE ENVIRONMENT ARE TIED UP SUBSTANTIALLY ONLY IN SAID ONE END OF THE CHARGE, TERMINATING THE FIRST MELTING OF THE ZONE AT SAID ONE END, AND THEREAFTER FORMING IN THE END OF THE CHARGE OPPOSITE TO SAID ONE END A SECOND MOLTEN ZONE AND CAUSING THE SECOND MOLTEN ZONE TO TRAVERSE THE CHARGE TOWARD THE SAID ONE END ENABLING THE LATTER ZONE-MELTING TO BE CARRIED OUT IN AN ENVIRONMENT SUBSTANTIALLY FREED OF THE SAID UNDESIRABLE IMPURITIES BY THE MELTING OF THE FIRST ZONE.
Claim 2
Independent Claim 168 words
A METHOD OF ZONE-MELTING A SEMICONDUCTIVE MATERIAL IN A CLOSED ENVIRONMENT IN WHICH MAY BE PRESENT UNDESIRABLE IMPURITIES WHICH TEND TO COMBINE WITH THE SEMICONDUCTIVE MATERIAL WHEN THE LATTER IS MELTED, COMPRISING PROVIDING IN THE SAID CLOSED ENVIRONMENT A QUANTITY OF SAID MATERIAL TO BE SUBJECTED TO THE SAID ZONE-MELTING IN THE FORM OF AN ELONGATED CHARGE, FIRST MELTING A ZONE OF THE CHARGE CONFINED TO ONE END OF THE CHARGE SO THAT COMBINATION WITH THE UNDESIRABLE IMPURITIES OCCURS UNTIL THE SAID UNDESIRABLE IMPURITIES IN THE ENVIRONMENT ARE TIED UP SUBSTANTIALLY ONLY IN SAID ONE END OF THE CHARGE, TERMINATING THE FIRST MELTING OF THE ZONE AT SAID ONE END, AND THEREAFTER FORMING IN THE END OF THE CHARGE OPPOSITE TO SAID ONE END A SECOND MOLTEN ZONE AND CAUSING THE SECOND MOLTEN ZONE TO TRAVERSE THE CHARGE TOWARD THE SAID ONE END ENABLING THE LATTER ZONE-MELTING TO BE CARRIED OUT IN AN ENVIRONMENT SUBSTANTIALLY FREED OF THE SAID UNDESIRABLE IMPURITIES BY THE MELTING OF THE FIRST ZONE.

References Cited (Backward Citations)

US2876147A Cited
US2855335A Cited
US3092462A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1968-10-04 1969-04-05 1969-10-05 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1972-10-04 1973-04-05 1973-10-05 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1976-10-04 1977-04-05 1977-10-05 $7700.00 Window Closed / Lapsed

Assigned Categories & Tags

No categories assigned to this patent yet.

Assign Category Tag