Method of producing monocrystals of a semiconductor via the vapor phase

Claim 1

A METHOD OF GROWING A SINGLE CRYSTAL VIA A VAPOR PHASE, COMPRISING ESTABLISHING A FIRST HEATED ZONE AT A HIGH TEMPERATURE AND AT OPPOSITE SIDES SECONDS AND THIRD HEATED ZONES AT TEMPERATURES LOWER THAN THAT OF SAID FIRST ZONE, PROVIDING WITHIN AN ELONGATED VESSEL AT ONE END THEREOF A CHARGE OF A POLYCRYSTALLINE SUBSTANCE WHICH WILL VAPORIZE UPON HEATING AND FROM WHICH IS IS DESIRED TO GROW A SINGLE-CRYSTAL, THE OTHER END OF SAID VESSEL BEING ADAPTED TO SERVE AS A NUCLEATION SITE FOR CONDENSED VAPOR, THE HIGH AND LOWER TEMPERATURES AT SAID FIRST AND AT SAID SECOND AND THIRD HEATED ZONES BEING OF VALUES AT WHICH VAPORIZATION AND CONDENSATION, RESPECTIVELY, OF VALUES AT WHICH STANCE OCCUR THEREIN, DISPOSING SAID VESSEL RELATIVE TO SAID HEATED ZONES SUCH THAT THE VESSEL IS LOCATED IN THE SECOND ZONE AT LOWER TEMPERATURE WITH SAID OTHER END ADJACENT THE SAID FIRST ZONE AND THE SAID ONE END REMOTE FROM THE SAID FIRST ZONE, THEREAFTER SLOWLY RELATIVELY DISPLACING THE VESSEL AND ZONES SUCH THAT THE SAID OTHER END OF THE VESSEL CONTAINING THE NUCLEATION SITE PASSES FIRST FROM THE SECOND ZONE INTO AND THROUGH THE FIRST ZONE AND THEN INTO THE THIRD ZONE FOLLOWED BY THE SAID ONE END CONTAINING THE CHARGE WHICH BECOMES LOCATED IN THE FIRST ZONE WHEREBY THE VAPORS THEREOF PRODUCED AT THE FIRST ZONE TRAVEL TO AND CONDENSE TO GROW A SUBSTANTIALLY SINGLE CRYSTAL AT THE CLEANED NUCLEATION SITE IN THE THIRD ZONE.

Claim 2

A METHOD OF GROWING A SINGLE CRYSTAL VIA A VAPOR PHASE, COMPRISING ESTABLISHING A FIRST HEATED ZONE AT A HIGH TEMPERATURE AND AT OPPOSITE SIDES SECONDS AND THIRD HEATED ZONES AT TEMPERATURES LOWER THAN THAT OF SAID FIRST ZONE, PROVIDING WITHIN AN ELONGATED VESSEL AT ONE END THEREOF A CHARGE OF A POLYCRYSTALLINE SUBSTANCE WHICH WILL VAPORIZE UPON HEATING AND FROM WHICH IS IS DESIRED TO GROW A SINGLE-CRYSTAL, THE OTHER END OF SAID VESSEL BEING ADAPTED TO SERVE AS A NUCLEATION SITE FOR CONDENSED VAPOR, THE HIGH AND LOWER TEMPERATURES AT SAID FIRST AND AT SAID SECOND AND THIRD HEATED ZONES BEING OF VALUES AT WHICH VAPORIZATION AND CONDENSATION, RESPECTIVELY, OF VALUES AT WHICH STANCE OCCUR THEREIN, DISPOSING SAID VESSEL RELATIVE TO SAID HEATED ZONES SUCH THAT THE VESSEL IS LOCATED IN THE SECOND ZONE AT LOWER TEMPERATURE WITH SAID OTHER END ADJACENT THE SAID FIRST ZONE AND THE SAID ONE END REMOTE FROM THE SAID FIRST ZONE, THEREAFTER SLOWLY RELATIVELY DISPLACING THE VESSEL AND ZONES SUCH THAT THE SAID OTHER END OF THE VESSEL CONTAINING THE NUCLEATION SITE PASSES FIRST FROM THE SECOND ZONE INTO AND THROUGH THE FIRST ZONE AND THEN INTO THE THIRD ZONE FOLLOWED BY THE SAID ONE END CONTAINING THE CHARGE WHICH BECOMES LOCATED IN THE FIRST ZONE WHEREBY THE VAPORS THEREOF PRODUCED AT THE FIRST ZONE TRAVEL TO AND CONDENSE TO GROW A SUBSTANTIALLY SINGLE CRYSTAL AT THE CLEANED NUCLEATION SITE IN THE THIRD ZONE.