Patent US3208887A successfully refreshed from Google Patents.
US3208887A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Fast switching diodes
Assignee: International Business Machines Corp
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Filing: 1961-06-23
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Granted: 1965-09-28
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Expires: 1981-06-23
Abstract
No abstract record available.
Inventors
- 👤 Richard L Anderson
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-28 10:24
CPC Classifications
H; H03; H03K; H03K17/00; H03K17/51; H03K17/74; C; C30; C30B; C30B25/00; C30B25/02; H10; H10D; H10D99/00; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; H10P14/3438; H10P14/3441; H10P14/3442; H10P14/3444
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
165 words
A FAST SWITCHING P-N JUNCTION SEMICONDUCTOR DIODE HAVING A BODY OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL COMPRISING A FIRST REGION CONTAINING A FIRST EXTRINSIC CONDUCTIVITY TYPE DETERMINING IMPURITY ESTABLISHING A FIRST VALUE OF RESISTIVITY THROUGHOUT A FIRST PORTION OF ITS VOLUME, SAID RESISTIVITY INCREASING TO A MAXIMUM AT THE JUNCTION, AND A SECOND REGION OF OPPOSITE EXTRINSIC CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL CONTIGUOUS WITH SAID FIRST REGION AND ESTABLISHING THE P-N JUNCTION WHEREIN THE IMPURITY CONCENTRATION FIRST INCREASES AND THEN DECREASES WITH INCREASING DISTANCE FROM THE JUNCTION AND THEN DECREASES WITH INCREASING DISTANCE FROM THE JUNCTION AFTER A MAXIMUM POINT JUST OUTSIDE OF THE TRANSISTOR REGION FOR SETTING UP A DRIFT FIELD THEREIN TO SWEEP INJECTED EXCESS MINORITY CARRIERS AWAY FROM THE JUNCTION WHEN THE DEVICE IS REVERSE BIASED AND WHEREIN THE IMPURITY CONCENTRATION OF THE SECOND REGION LEVELS OFF AT A POINT REMOVED FROM SAID MAXIMUM TO ESTABLISH AN OVERALL RESISTIVITY IN SAID SECOND REGION OF AT LEAST FIVE TIMES THE OVERALL RESISTIVITY OF THE FIRST REGION.
Claim 2
Dependent Claim
165 words
A FAST SWITCHING P-N JUNCTION SEMICONDUCTOR DIODE HAVING A BODY OF MONOCRYSTALLINE SEMICONDUCTOR MATERIAL COMPRISING A FIRST REGION CONTAINING A FIRST EXTRINSIC CONDUCTIVITY TYPE DETERMINING IMPURITY ESTABLISHING A FIRST VALUE OF RESISTIVITY THROUGHOUT A FIRST PORTION OF ITS VOLUME, SAID RESISTIVITY INCREASING TO A MAXIMUM AT THE JUNCTION, AND A SECOND REGION OF OPPOSITE EXTRINSIC CONDUCTIVITY TYPE SEMICONDUCTOR MATERIAL CONTIGUOUS WITH SAID FIRST REGION AND ESTABLISHING THE P-N JUNCTION WHEREIN THE IMPURITY CONCENTRATION FIRST INCREASES AND THEN DECREASES WITH INCREASING DISTANCE FROM THE JUNCTION AND THEN DECREASES WITH INCREASING DISTANCE FROM THE JUNCTION AFTER A MAXIMUM POINT JUST OUTSIDE OF THE TRANSISTOR REGION FOR SETTING UP A DRIFT FIELD THEREIN TO SWEEP INJECTED EXCESS MINORITY CARRIERS AWAY FROM THE JUNCTION WHEN THE DEVICE IS REVERSE BIASED AND WHEREIN THE IMPURITY CONCENTRATION OF THE SECOND REGION LEVELS OFF AT A POINT REMOVED FROM SAID MAXIMUM TO ESTABLISH AN OVERALL RESISTIVITY IN SAID SECOND REGION OF AT LEAST FIVE TIMES THE OVERALL RESISTIVITY OF THE FIRST REGION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-09-27 | 1969-03-29 | 1969-09-28 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-09-27 | 1973-03-29 | 1973-09-28 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-09-27 | 1977-03-29 | 1977-09-28 | $7700.00 | Window Closed / Lapsed |