Surface-potential controlled semiconductor device

Claim 1

A SILICON SEMICONDUCTOR DEVICE COMPRISING A BODY OF SEMICONDUCTOR HAVING A COLLECTOR REGION OF ONE CONDUCTIVITY TYPE, A DIFFUSED BASE REGION OF OPPOSITE CONDUCTIVITY TYPE DISPOSED WITHIN SAID COLLECTOR REGION AND EXTENDING INWARDLY FROM A SURFACE OF SAID COLLECTOR REGION, A DIFFUSED EMITTER REGION OF THE SAME CONDUCTIVITY AS SAID COLLECTOR REGION DISPOSED WITHIN SAID BASE REGION AND EXTENDING INWARDLY FROM SAID SURFACE, AN EMITTERBASE JUNCTION BETWEEN SAID EMITTER REGION AND SAID BASE REGION HAVING AN EDGE EXTENDING TO SAID SURFACE, A BASECOLLECTOR JUNCTION BETWEEN SAID BASE REGION AND SAID COLLECTOR REGION EXTENDING TO SAID SURFACE, AN INTEGRAL SILICON OXIDE INSULATING LAYER OVER SAID EDGE OF SAID EMITTERBASE JUNCTION ON SAID SURFACE, A CONTROL ELECTRODE ON SAID INSULATING LAYER IN CAPACITIVELY COUPLED RELATION TO SAID EDGE OF SAID EMITTER-BASE JUNCTION, AND ELECTRODE MEANS FOR MAKING ELECTRICAL CONTACT TO SAID EMITTER, BASE AND COLLECTOR REGIONS, THE EMITTER AND BASE CONTACTS BEING ATTACHED TO AREAS OF THE EMITTER AND BASE REGIONS AT SAID SURFACE.