Glass encapsulated semiconductor device

Claim 1

A SEMICONDUCTOR DEVICE COMPRISING A SILICONIFEROUS CRYSTAL LATERAALLY BOUNDED BY A CIRCUMFERENTIAL EDGE, SAID CRYSTAL HAVING AT LEAST ONE N-P JUNCTION TERMINATING AT SAID EDGE AND HAVING FACES ON OPPOSITE SIDES OF SAID JUNCTION FOR THE ATTACHMENT OF LEADS, A CONDUCTIVE WHOLLY METALLIC LEAD PROJECTING FROM EACH OF SAID FACES, A WHOLLY METALLIC BONDING LAYER DISPOSED BETWEEN EACH LEAD AND THE ADJACENT CRYSTAL FACE AND BEING THE SOLE MEANS SECURING THE LEAD TO THE CRYSTAL FACE, THE CIRCUMFERENTIAL EDGE OF THE CRYSTAL HAVING ITS SURFACE OXIDIZED, SAID BONDING LAYER BEING FUSIBLE ONLY AT TEMPERATURES ABOVE 700*C., AND A PROTECTIVE ENVELOPE OF GLASS WHICH IS FUSIBLE BELOW THE MELTING TEMPERATURE OF SAID BONDING LAYER SURROUNDING THE CRYSTAL AND FUSED INTO DIRECT CONTACT WITH THE OXIDIZED EDGE OF THE CRYSTAL AND WITH THE LEADS.