Self-searching memory utilizing improved memory elements

Claim 1

A MEMORY CELL COMPRISING A PLURALITY OF SUPERCONDUCTIVE DEVICES ARRANGED TO EFFECT THE STORAGE OF BINARY CODED INFORMATION IN THE FORM OF THE PRESENCE OR ABSENCE OF A CIRCULATING CURRENT AND TO PROVIDE A COMPARISON BETWEEN THE STORED INFORMATION STATE AND IDENTIFICATION KEY SIGNALS APPLIED THERETO COMPRISING A GATED PERSISTOR LOOP, EACH OF THE DEVICES HAVING A GATING ELEMENT AND A CONTROL ELEMENT, MEANS FOR STORING A CIRCULATING CURRENT IN SAID LOOP, A FIRST DEVICE HAVING A CONTROL ELEMENT IN SERIES WITH SAID LOOP FOR PREVENTING THE SELECTION OF A PARTICULAR CIRCUIT IN THE EVENT OF A MISMATCH BETWEEN APPLIED IDENTIFICATION KEY SIGNALS AND A STORED INFORMATION STATE, A SECOND DEVICE RESPONSIVE TO SELECTIVELY APPLIED COMPARISON CONTROL SIGNALS AND CONNECTED IN PARALLEL WITH SAID FIRST DEVICE FOR BYPASSING CURRENT FROM SAID FIRST DEVICE ONLY IN THE EVENT THAT COMPARISON CONTROL SIGNALS ARE MASKED FROM SAID CIRCUIT, AND MEANS FOR READING OUT THE STATE OF STORED INFORMATION IN SAID PERSISTOR LOOP COMPRISING A THIRD DEVICE HAVING A CONTROL ELEMENT IN SERIES WITH SAID LOOP FOR PROVIDING A PARTICULAR OUTPUT INDICATION IN THE EVENT OF A STORED CIRCULATING CURRENT IN SAID LOOP.