Semiconductor multisection r-c filter of tapered monolithic construction having progressively varied values of impedance per section

Claim 1

A MONOLITHIC SEMICONDUCTOR MULTISECTION FILTER DEVICE COMPRISING TWO SEMICONDUCTOR REGIONS OF OPPOSITE CONDUCTIVITY TYPE FORMING A P-N JUNCTION WHICH WHEN REVERSE BIASED PROVIDES A CAPACITANCE, THE REGIONS TAPERERING IN WIDTH ALONG THE LENGTH OF THE DEVICE WHEREBY THE CAPACITANCE PER UNIT LENGTH OF THE REVERSE BIASED JUNCTION PROGRESSIVELY VARIES ALONG THE LENGTH OF THE DEVICE, AT LEAST ONE OF THE SEMCONDUCTOR REGIONS TAPERING IN DEPTH ALONG THE LENGTH OF THE DEVICE TO PROVIDE A PROGRRESSIVELY VARYING VALVE OF RESISTANCE. VARYING IN THE SENSE OPPOSITE TO THE SENSE OF THE VARIATION OF THE CAPACITANCE ALONG THE LENGTH OF SAID DEVICE.