Patent US3194699A successfully refreshed from Google Patents.
US3194699A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making semiconductive devices
Assignee: Transitron Electronic Corp
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Filing: 1961-11-13
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Granted: 1965-07-13
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Expires: 1981-11-13
Abstract
No abstract record available.
Inventors
- 👤 Loring C White
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-03 08:02
CPC Classifications
H; H10; H10D; H10D99/00; H10D10/00; H10D84/00; H10D84/60; H10D84/645; H10P; H10P95/00; Y; Y10; Y10S; Y10S148/00; Y10S148/151; Y10S438/00; Y10S438/914; Y10S438/921
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
217 words
A METHOD OF MAKING A SEMICONDUCTIVE DEVICE WITH A LOW RESISTANCE PATH FROM THE SURFACE OF THE DEVICE TO THE BASE LAYER WHICH METHOD INCLUDES THE STEPS OF PROCESSING SEMICONDUCTOR MATERIAL TO ESTABLISH AN EMITTER LAYER OF FIRST CONDUCTIVITY IN THE SURFACE OF SAID MATERIAL WITH A FIRST CARRIER DENSITY, A BASE LAYER IN RECITIFYING CONTACT WITH SAID EMITTER OF SECOND CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE WITH A SECOND CARRIER DENSITY LESS THAN SAID FIRST CARRIER DENSITY AND HAVING AN INTERNAL PORTION AND AN EXTERNAL PORTION IN THE SURFACE OF SAID MATERIAL WITH SAID INTERNAL PORTION SEPARATED FROM SAID SURFACE BY BOTH SAID EXTERNAL PORTION AND SAID EMITTER LAYER, AND A THIRD LAYER OF CONDUCTIVITY TYPE DIFFERENT FROM SAID SECOND CONDUCTIVITY TYPE AND SEPARATED FROM SAID EMITTER LAYER BY THE THICKNESS OF SAID INTERNAL BASE LAYER PORTION, AND DIFFUSING A SUBSTANCE OF SAID SECOND CONDUCTIVITY TYPE WITH A CARRIER DENSITY LESS THAN SAID FIRST CARRIER DENSITY AND GREATER THAN SAID SECOND CARRIER DENSITY THROUGH SAID SURFACE INTO SAID EXTERNAL BASE LAYER PORTION TO REDUCE THE RESISTANCE THROUGH SAID EXTERNAL BASE LAYER PORTION FROM SAID SURFACE TO SAID INTERNAL BASE LAYER PORTION WHILE MAINTAINING THE RECTIFYING CONTACT BETWEEN SAID EMITTER AND BASE LAYERS AND MAINTAINING THE CARRIER DENSITY IN SAID INTERNAL BASE PORTION SUBSTANTIALLY UNAFFECTED.
Claim 2
Independent Claim
217 words
A METHOD OF MAKING A SEMICONDUCTIVE DEVICE WITH A LOW RESISTANCE PATH FROM THE SURFACE OF THE DEVICE TO THE BASE LAYER WHICH METHOD INCLUDES THE STEPS OF PROCESSING SEMICONDUCTOR MATERIAL TO ESTABLISH AN EMITTER LAYER OF FIRST CONDUCTIVITY IN THE SURFACE OF SAID MATERIAL WITH A FIRST CARRIER DENSITY, A BASE LAYER IN RECITIFYING CONTACT WITH SAID EMITTER OF SECOND CONDUCTIVITY TYPE OPPOSITE TO SAID FIRST CONDUCTIVITY TYPE WITH A SECOND CARRIER DENSITY LESS THAN SAID FIRST CARRIER DENSITY AND HAVING AN INTERNAL PORTION AND AN EXTERNAL PORTION IN THE SURFACE OF SAID MATERIAL WITH SAID INTERNAL PORTION SEPARATED FROM SAID SURFACE BY BOTH SAID EXTERNAL PORTION AND SAID EMITTER LAYER, AND A THIRD LAYER OF CONDUCTIVITY TYPE DIFFERENT FROM SAID SECOND CONDUCTIVITY TYPE AND SEPARATED FROM SAID EMITTER LAYER BY THE THICKNESS OF SAID INTERNAL BASE LAYER PORTION, AND DIFFUSING A SUBSTANCE OF SAID SECOND CONDUCTIVITY TYPE WITH A CARRIER DENSITY LESS THAN SAID FIRST CARRIER DENSITY AND GREATER THAN SAID SECOND CARRIER DENSITY THROUGH SAID SURFACE INTO SAID EXTERNAL BASE LAYER PORTION TO REDUCE THE RESISTANCE THROUGH SAID EXTERNAL BASE LAYER PORTION FROM SAID SURFACE TO SAID INTERNAL BASE LAYER PORTION WHILE MAINTAINING THE RECTIFYING CONTACT BETWEEN SAID EMITTER AND BASE LAYERS AND MAINTAINING THE CARRIER DENSITY IN SAID INTERNAL BASE PORTION SUBSTANTIALLY UNAFFECTED.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-07-12 | 1969-01-11 | 1969-07-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-07-12 | 1973-01-11 | 1973-07-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-07-12 | 1977-01-11 | 1977-07-13 | $7700.00 | Window Closed / Lapsed |