US3193366A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Semiconductor encapsulation
Assignee: AT&T Inc
•
Filing: 1961-07-12
•
Granted: 1965-07-06
•
Expires: 1981-07-12
Abstract
No abstract record available.
Inventors
- 👤 James E Clark
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 23:24
CPC Classifications
H; H10; H10W; H10W76/00; H10W76/10; H10W76/12; H10W76/13; H10W76/138; H01; H01J; H01J5/00; H01J5/20; H01J5/22; H01J5/26; H01J2893/00; H01J2893/0033; H01J2893/0037; H01J2893/0041; H01J2893/0043
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
173 words
A METHOD FOR ENCAPSULATING A SEMICONDUCTOR ELEMENT, SAID METHOD COMPRISING THE STEPS OF POOSITIONING AT ATMOSPHERIC PRESSURE AND ROOM TEMPERATURE A SEMICONDUCTOR ELEMENT ON THE EXTREME END OF THE SHANK PORTION OF A SHOULDERED STUD, PLACING A TIGHT-FITTING GLASS SLEEVE OVER THE SHANK PORTION OF SAID STUD, SAID GLASS SLEEVE HAVING A LENGTH SLIGHTLY GREATER THAN TWICE THAT OF SAID SHANK PORTION, INSERTING THE SHANK PORTION OF A SECOND SHOULDERED STUD INTO THE OPPOSITE END OF SAID GLASS SLEEVE, HEATING TO ABOUT 500 DEGREES CENTIGRADE FOR APPROXIMATELY ONE MINUTE, APPLYING AN INITIAL FORCE OF ABOUT 25 GRAMS DIRECTED INWARDLY ON SAID SHOULDERED STUDS, INCREASING THE AMBIENT GAS PRESSURE TO ABOUT 75 POUNDS PER SQUARE INCH,AND HEATING FOR A TIME FOR A TIME AT A TEMPERATURE IN THE RANGE FROM ABOUT 650 DEGREES TO 750 DEGREES CENTIGRADE FOR LESS THAN ON MINUTE TO PRODUCE A SEAL ALONG THE ENTIRE SHANK OF BOTH STUDS AND THE EDGE OF THE SEMICONDUCTOR ELEMENT, SAID TEMPERATURE BEING SUBSTANTIALLY LESS THAN THE WORKING POINT TEMPERATURE OF SAID GLASS SLEEVE.
Claim 2
Independent Claim
173 words
A METHOD FOR ENCAPSULATING A SEMICONDUCTOR ELEMENT, SAID METHOD COMPRISING THE STEPS OF POOSITIONING AT ATMOSPHERIC PRESSURE AND ROOM TEMPERATURE A SEMICONDUCTOR ELEMENT ON THE EXTREME END OF THE SHANK PORTION OF A SHOULDERED STUD, PLACING A TIGHT-FITTING GLASS SLEEVE OVER THE SHANK PORTION OF SAID STUD, SAID GLASS SLEEVE HAVING A LENGTH SLIGHTLY GREATER THAN TWICE THAT OF SAID SHANK PORTION, INSERTING THE SHANK PORTION OF A SECOND SHOULDERED STUD INTO THE OPPOSITE END OF SAID GLASS SLEEVE, HEATING TO ABOUT 500 DEGREES CENTIGRADE FOR APPROXIMATELY ONE MINUTE, APPLYING AN INITIAL FORCE OF ABOUT 25 GRAMS DIRECTED INWARDLY ON SAID SHOULDERED STUDS, INCREASING THE AMBIENT GAS PRESSURE TO ABOUT 75 POUNDS PER SQUARE INCH,AND HEATING FOR A TIME FOR A TIME AT A TEMPERATURE IN THE RANGE FROM ABOUT 650 DEGREES TO 750 DEGREES CENTIGRADE FOR LESS THAN ON MINUTE TO PRODUCE A SEAL ALONG THE ENTIRE SHANK OF BOTH STUDS AND THE EDGE OF THE SEMICONDUCTOR ELEMENT, SAID TEMPERATURE BEING SUBSTANTIALLY LESS THAN THE WORKING POINT TEMPERATURE OF SAID GLASS SLEEVE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-07-05 | 1969-01-04 | 1969-07-06 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-07-05 | 1973-01-04 | 1973-07-06 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-07-05 | 1977-01-04 | 1977-07-06 | $7700.00 | Window Closed / Lapsed |