Method of pulling a dendritic crystal from a vapor atmosphere

Claim 1

A METHOD OF PRODUCING THIN MONOCYRSTALLINE SEMICONDUCTOR BODIES BY THERMAL DECOMPOSITION OF A GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE AND PRECIPITATION ONTO A CARRIER, WHICH COMPRISES PLACING A THIN PLATESHAPED SEED CRYSTAL, SAID SEED CRYSTAL HAVING A NARROW EDGE, A BROAD SURFACE AND AT LEAST ONE TWIN PLANE EXTENDING PARALLEL TO ITS BROAD SURFACE, INTO AN ATMOSPHERE OF A REACTION MIXTURE OF THE SEMICONDUCTOR SUBSTANCE, HEATING THE NARROW EDGE OF SAID SEED CRYSTAL TO DISSOCIATION TEMPERATURE OF THE REACTION MIXTURE WHILE SIMULTANEOUSLY COOLING THE REACTION MIXTURE IN LINE WITH THE TWIN PLANE OF SAID NARROW EDGE OF SAID SEED CRYSTAL BETWEEN THE HEAT SOURCE AND SAID NARROW EDGE, THEREBY PRODUCING A REACTION ZONE AT THE NARROW EDGE OF SAID SEED CRYSTAL CAUSING SEMICONDUCTOR SUBSTANCE TO PRECIPITATE ON THE NARROW EDGE OF SAID SEED CRYSTAL, SAID SEED BEING ORIENTED SO THAT SAID BROAD SURFACE EXTENDS IN THE DIRECTION OF THE 111-PLANE AND SAID NARROW EDGE PERPENDICULAR TO SAID BROAD SURFACE EXTENDS IN THE 211-PLANE CAUSING THE RATE OF GROWTH IN THE DIRECTION OF THE BROAD SURFACE TO BE CONSIDERABLY GREATER THAN IN THE DIRECTION OF SAID NARROW EDGE, AND PULLING SAID SEED OUT OF SAID REACTION ZONE AT A RATE CORRESPONDING TO THE SEMICONDUCTOR GROWTH RATE ON THE NARROW EDGE.

Claim 2

A METHOD OF PRODUCING THIN MONOCYRSTALLINE SEMICONDUCTOR BODIES BY THERMAL DECOMPOSITION OF A GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE AND PRECIPITATION ONTO A CARRIER, WHICH COMPRISES PLACING A THIN PLATESHAPED SEED CRYSTAL, SAID SEED CRYSTAL HAVING A NARROW EDGE, A BROAD SURFACE AND AT LEAST ONE TWIN PLANE EXTENDING PARALLEL TO ITS BROAD SURFACE, INTO AN ATMOSPHERE OF A REACTION MIXTURE OF THE SEMICONDUCTOR SUBSTANCE, HEATING THE NARROW EDGE OF SAID SEED CRYSTAL TO DISSOCIATION TEMPERATURE OF THE REACTION MIXTURE WHILE SIMULTANEOUSLY COOLING THE REACTION MIXTURE IN LINE WITH THE TWIN PLANE OF SAID NARROW EDGE OF SAID SEED CRYSTAL BETWEEN THE HEAT SOURCE AND SAID NARROW EDGE, THEREBY PRODUCING A REACTION ZONE AT THE NARROW EDGE OF SAID SEED CRYSTAL CAUSING SEMICONDUCTOR SUBSTANCE TO PRECIPITATE ON THE NARROW EDGE OF SAID SEED CRYSTAL, SAID SEED BEING ORIENTED SO THAT SAID BROAD SURFACE EXTENDS IN THE DIRECTION OF THE 111-PLANE AND SAID NARROW EDGE PERPENDICULAR TO SAID BROAD SURFACE EXTENDS IN THE 211-PLANE CAUSING THE RATE OF GROWTH IN THE DIRECTION OF THE BROAD SURFACE TO BE CONSIDERABLY GREATER THAN IN THE DIRECTION OF SAID NARROW EDGE, AND PULLING SAID SEED OUT OF SAID REACTION ZONE AT A RATE CORRESPONDING TO THE SEMICONDUCTOR GROWTH RATE ON THE NARROW EDGE.