Vapor deposition process to form a retrograde impurity distribution p-n junction formation wherein the vapor contains both donor and acceptor impurities

Claim 1

THE METHOD OF PROVIDING A RETROGRADE IMPURITY DISTRIBUTION IN A VAPOR GROWN BODY OF GERMANIUM COMPRISING THE STEPS OF POSITIONING IN A SEALED CONTAINER A FIRST CONDUCTIVITY TYPE LADEN SOURCE OF GERMANIUM, A MONOCRYSTALLINE SUBSTRATE OF GERMANIUM AND AN OPPOSITE TYPE CONDUCTIVITY TYPE IMPURITY LADEN SOURCE OF GERMANIUM, EACH IN SEPARATE DISCRETE LOCATIONS IN THE PRESENCE OF A VAPOR OF A COMPOUND OF A TRANSPORT ELEMENT AND GERMANIUM, EPITAXIALLY VAPOR GROWING A FIRST CONDUCTIVITY TYPE PORTION ON SAID GERMANIUM SUBSTRATE AND DURING SAID VAPOR GROWTH DEPOSITING IN A PORTION OF SAID CONTAINER IN THE VINCINITY OF THE LOCATION OF SAID OPPOSITE CONDUCTIVITY TYPE DETERMING IMPURITY LADEN GERMANIUM SOURCE A QUANTITY OF A SOLID FIRST CONDUCTIVITY TYPE IMPURITY BEARING MATERIAL, ESTABLISHING AN EQUILIBRIUM DURING WHICH NO SIGNIFICANT VAPOR GROWTH TAKES PLACE, SIMULTANEOUSLY VAPORIZING SAID SOLID FIRST CONDUCTIVITY TYPE IMPURITY TYPE BEARING MATERIAL AND SAID OPPOSITE CONDUCTIVITY TYPE IMPURITY LADEN SOURCE OF GERMANIUM AND VAPOR GROWING A QUANTITY OF GERMANIUM ON SAID FIRST GROWN PORTION OF SAID GERMANIUM ON SAID SUBSTRATE.