Patent US3189472A successfully refreshed from Google Patents.
US3189472A
Expired / Lapsed
US
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Refractory articles
Assignee: Unifrax I LLC
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Filing: 1961-02-03
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Granted: 1965-06-15
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Expires: 1981-02-03
Abstract
No abstract record available.
Inventors
- 👤 Kenneth M Taylor
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-25 21:24
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/515; C04B35/56; C04B35/565; C04B35/573
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
150 words
A METHOD FOR PRODUCING A DENSE BODY CONSISTING PRINCIPALLY OF SILICON CARBIDE AND HAVING IMPROVED RESISTANCE TO OXIDATION AT TEMPERATURES IN THE RANGE FROM ABOUT 1500*C. TO ABOUT 1850*C., WHICH COMPRISES: FORMING A BODY CONSISTING ESSENTIALLY OF SILCON CARBIDE, CARBON, AND, AS AN ADDITIVE FOR IMPARTING SAID OXIDATION RESISTANCE, AT LEAST ONE MEMBER OF HE GROUP CONSISTING OF TUNGSTEN, CHROMIUM, IRON, HAFNIUM, TANTALUM, TITANIUM, ZIRCONIUM, AND MOLYBDENUM, AND COMPOUNDS THEREOF; AND SILICONIZING SAID BODY AT A TEMPERATURE OF AT LEAST ABOUT 2100*C. TO CONVERT SAID CARBON T O SILICON CARBIDE WHEREBY TO GIVE A DENSE BODY HAVING A DENSITY OF AT LEAST 3.0 G./CM.3, SAID ADDITIVE BEING PRESENT BEFORE SILICONIZING IN AN AMOUNT EQUIVALENT TO FROM ABOUT 2 WT. PERCENT TO ABOUT 10 WT. PERCENT OF METAL IN SAID DENSE BODY AND BEING OF SUCH NATURE AS TO REMAIN IN SAID BODY AT THE TEMPERATURE EMPLOYED IN SILICONIZING SAID BODY.
Claim 2
Independent Claim
150 words
A METHOD FOR PRODUCING A DENSE BODY CONSISTING PRINCIPALLY OF SILICON CARBIDE AND HAVING IMPROVED RESISTANCE TO OXIDATION AT TEMPERATURES IN THE RANGE FROM ABOUT 1500*C. TO ABOUT 1850*C., WHICH COMPRISES: FORMING A BODY CONSISTING ESSENTIALLY OF SILCON CARBIDE, CARBON, AND, AS AN ADDITIVE FOR IMPARTING SAID OXIDATION RESISTANCE, AT LEAST ONE MEMBER OF HE GROUP CONSISTING OF TUNGSTEN, CHROMIUM, IRON, HAFNIUM, TANTALUM, TITANIUM, ZIRCONIUM, AND MOLYBDENUM, AND COMPOUNDS THEREOF; AND SILICONIZING SAID BODY AT A TEMPERATURE OF AT LEAST ABOUT 2100*C. TO CONVERT SAID CARBON T O SILICON CARBIDE WHEREBY TO GIVE A DENSE BODY HAVING A DENSITY OF AT LEAST 3.0 G./CM.3, SAID ADDITIVE BEING PRESENT BEFORE SILICONIZING IN AN AMOUNT EQUIVALENT TO FROM ABOUT 2 WT. PERCENT TO ABOUT 10 WT. PERCENT OF METAL IN SAID DENSE BODY AND BEING OF SUCH NATURE AS TO REMAIN IN SAID BODY AT THE TEMPERATURE EMPLOYED IN SILICONIZING SAID BODY.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-06-14 | 1968-12-14 | 1969-06-15 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-06-14 | 1972-12-14 | 1973-06-15 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-06-14 | 1976-12-14 | 1977-06-15 | $7700.00 | Window Closed / Lapsed |