Method of producing a broad area fused junction in a semiconductor body

Claim 1

A METHOD OF PRODUCING A BROAD AREA FUSED JUNCTION IN A SEMICONDUCTOR CRYSTAL BODY COMPRISING THE STEPS OF: (A) DISPOSING A METAL FOIL UPON A HORIZONTAL HEAT CONDUCTIVE SURFACE, SAID METAL FOIL CONTAINING ATOMS OF AN ACTIVE IMPURITY AND BEING LATERALLY FREE OF RESTRAINT; (B) DISPOSING A SEMICONDUCTOR CRYSTAL BODY UPON SAID METAL FOIL TO THEREBY FORM A SEMICONDUCTOR FOIL SANDWICH; (C) URGING SAID CRYSTAL BODY AND SAID HEAT CONDUCTIVE SURFACE TOWARD EACH OTHER WHILE UNIFORM HEATING THEM SUFFICIENTLY TO ALLOY THE METAL TO THE SEMICONDUCTOR CRYSTAL BODY, SAID HEATING BEING TO A TEMPERATURE BELOW THE MELTING POINT OF TH SEMICONDUCTOR MATERIAL WHEREBY MOLTEN ALLOY IS SQUEEZED OUTWARDLY AND SAID CRYSTAL BODY AND SAID HEAT CONDUCTIVE SURFACE AND MOVED TOWARD EACH OTHER; (D) ARRESTING MOVEMENT OF SAID HEAT CONDUCTIVE SURFACE AND SAID CRYSTAL BODY AND TOWARD EACH OTHER AFTER MOVEMENT THROUGH A DISTANCE LESS THAN THE THICKNESS OF SAID METAL FOIL PRIOR TO HEATING; AND (E) MAINTAINING SAID HEAT CONDUCTIVE SURFACE AND SAID CRYSTAL BODY AT THE DISTANCE APART ACHIEVED AFTER ARRESTING OF SAID MOVEMENT WHILE SAID SEMICONDUCTOR CRYSTAL BODY AND METAL ARE COOLING, WHEREBY THE THICKNESS OF SAID SEMICONDUCTOR CRYSTAL BODY AND ALLOYED METAL IS LESS THAN THE COMBINED THICKNESS OF SAID METAL FOIL AND SEMICONDUCTOR CRYSTAL BODY PRIOR TO HEATING.

Claim 2

A METHOD OF PRODUCING A BROAD AREA FUSED JUNCTION IN A SEMICONDUCTOR CRYSTAL BODY COMPRISING THE STEPS OF: (A) DISPOSING A METAL FOIL UPON A HORIZONTAL HEAT CONDUCTIVE SURFACE, SAID METAL FOIL CONTAINING ATOMS OF AN ACTIVE IMPURITY AND BEING LATERALLY FREE OF RESTRAINT; (B) DISPOSING A SEMICONDUCTOR CRYSTAL BODY UPON SAID METAL FOIL TO THEREBY FORM A SEMICONDUCTOR FOIL SANDWICH; (C) URGING SAID CRYSTAL BODY AND SAID HEAT CONDUCTIVE SURFACE TOWARD EACH OTHER WHILE UNIFORM HEATING THEM SUFFICIENTLY TO ALLOY THE METAL TO THE SEMICONDUCTOR CRYSTAL BODY, SAID HEATING BEING TO A TEMPERATURE BELOW THE MELTING POINT OF TH SEMICONDUCTOR MATERIAL WHEREBY MOLTEN ALLOY IS SQUEEZED OUTWARDLY AND SAID CRYSTAL BODY AND SAID HEAT CONDUCTIVE SURFACE AND MOVED TOWARD EACH OTHER; (D) ARRESTING MOVEMENT OF SAID HEAT CONDUCTIVE SURFACE AND SAID CRYSTAL BODY AND TOWARD EACH OTHER AFTER MOVEMENT THROUGH A DISTANCE LESS THAN THE THICKNESS OF SAID METAL FOIL PRIOR TO HEATING; AND (E) MAINTAINING SAID HEAT CONDUCTIVE SURFACE AND SAID CRYSTAL BODY AT THE DISTANCE APART ACHIEVED AFTER ARRESTING OF SAID MOVEMENT WHILE SAID SEMICONDUCTOR CRYSTAL BODY AND METAL ARE COOLING, WHEREBY THE THICKNESS OF SAID SEMICONDUCTOR CRYSTAL BODY AND ALLOYED METAL IS LESS THAN THE COMBINED THICKNESS OF SAID METAL FOIL AND SEMICONDUCTOR CRYSTAL BODY PRIOR TO HEATING.