Patent US3179541A successfully refreshed from Google Patents.
US3179541A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Vapor growth with smooth surfaces by introducing cadmium into the semiconductor material
Assignee: International Business Machines Corp
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Filing: 1962-12-31
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Granted: 1965-04-20
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Expires: 1982-12-31
Abstract
No abstract record available.
Inventors
- 👤 Edward M Hull
- 👤 Vincent J Lyons
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-01 09:57
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/24; H10P14/34; H10P14/3402; H10P14/3414; H10P14/3421; H10P14/3438; H10P14/3441; H10P14/3446
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
113 words
A VAPOR GROWTH METHOD FOR OBTAINING SMOOTH-SURFACED DEPOSITS OF SEMICONDUCTOR MATERIAL, HAVING A THICKNESS GREATER THAN SEVERAL MILS, COMPRISING THE STEPS OF REACTING A HALOGEN TRANSPORT ELEMENT WITH A SOURCE OF SEMICONDUCTOR MATERIAL AND WITH A SOURCE OF CD IN A FIRST TEMPERATURE ZONE OF A REACTION CONTAINER, THEREBY TO PRODUCE A COMPOSITE VAPOR AND DECOMPOSING SAID COMPOSITE VAPOR IN A SECOND TEMPERATURE ZONE OF SAID REACTION CONTAINER TO PRODUCE AN EPITAXIAL DEPOSIT OF SAID SEMICONDUCTOR MATERIAL ON A SUBSTRATE SITUATED IN SAID SECOND ZONE WITH A CD CONCENTRATION IN SAID EPITAXIAL DEPOSIT OF APPROXIMATELY THE SOLUBILITY LIMIT FOR CD IN SAID SEMICONDUCTOR MATERIAL WHEREBY SMOOTH SURFACES ARE OBTAINED IN THE EPITAXIAL DEPOSIT.
Claim 2
Dependent Claim
113 words
A VAPOR GROWTH METHOD FOR OBTAINING SMOOTH-SURFACED DEPOSITS OF SEMICONDUCTOR MATERIAL, HAVING A THICKNESS GREATER THAN SEVERAL MILS, COMPRISING THE STEPS OF REACTING A HALOGEN TRANSPORT ELEMENT WITH A SOURCE OF SEMICONDUCTOR MATERIAL AND WITH A SOURCE OF CD IN A FIRST TEMPERATURE ZONE OF A REACTION CONTAINER, THEREBY TO PRODUCE A COMPOSITE VAPOR AND DECOMPOSING SAID COMPOSITE VAPOR IN A SECOND TEMPERATURE ZONE OF SAID REACTION CONTAINER TO PRODUCE AN EPITAXIAL DEPOSIT OF SAID SEMICONDUCTOR MATERIAL ON A SUBSTRATE SITUATED IN SAID SECOND ZONE WITH A CD CONCENTRATION IN SAID EPITAXIAL DEPOSIT OF APPROXIMATELY THE SOLUBILITY LIMIT FOR CD IN SAID SEMICONDUCTOR MATERIAL WHEREBY SMOOTH SURFACES ARE OBTAINED IN THE EPITAXIAL DEPOSIT.
References Cited (Backward Citations)
US2929859A
Cited
US3092591A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-04-19 | 1968-10-19 | 1969-04-20 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-04-19 | 1972-10-19 | 1973-04-20 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-04-19 | 1976-10-19 | 1977-04-20 | $7700.00 | Window Closed / Lapsed |