Memory sensing system

Claim 1

A VOLTAGE COMPARING CIRCUIT COMPRISING, A FIRST AND A SECOND TRANSFORMER EACH HAVING A PRIMARY AND A SECONDARY WINDING, SAID SECONDARY WINDING OF SAID FIRST TRANSFORMER INCLUDING A CENTER TAP, A THRESHOLD VOLTAGE SOURCE, MEANS ELECTRICALLY CONNECTING SAID THRESHOLD VOLTAGE SOURCE TO THE CENTER TAP ON THE SECONDARY WINDING OF SAID FIRST TRANSFORMER, FOUR TRANSISTORS EACH HAVING A BASE ELECTRODE, A COLLECTOR ELECTRODE, AND AN EMITTER ELECTRODE, MEANS ELECTRICALLY CONNECTING THE EMITTER ELECTRODES OF EACH OF THE FIRST, SECOND, AND THIRD TRANSISTORS OF SAID FOUR TRANSISTORS TO A COMMON SOURCE OF BIAS POTENTIAL, MEANS ELECTRICALLY CONNECTING THE COLLECTOR ELECTRODES OF THE FIRST AND SECOND TRANSISTORS OF SAID FOUR TRANSISTORS TO EACH OTHER AND TO A SOURCE OF BIAS POTENTIAL THROUGH THE PRIMARY WINDING OF SAID SECOND TRANSFORMER, MEANS ELECTRICALLY CONNECTING THE BASE ELECTRODE OF THE THIRD TRANSISTOR OF SAID FOUR TRANSISTORS TO A SOURCE OF BIAS POTENTIAL THROUGH THE SECONDARY WINDING OF SAID SECOND TRANSFORMER, MEANS ELECTRICALLY CONNECTING THE BASE ELECTRODES OF SAID FIRST AND SECOND TRANSISTORS TO OPPOSITE SIDES OF THE SECONDARY WINDING OF SAID FIRST TRANSFORMER, AND MEANS ELECTRICALLY CONNECTING THE BASE ELECTRODE OF THE FOURTH TRANSISTOR OF SAID FOUR TRANSISTORS TO THE COLLECTOR ELECTRODE OF SAID THIRD TRANSISTOR.