US3173765A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method of making crystalline silicon semiconductor material
Assignee: TDK Micronas GmbH
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Filing: 1955-03-18
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Granted: 1965-03-16
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Expires: 1975-03-18
Abstract
No abstract record available.
Inventors
- 👤 Andre R Gobat
- 👤 Daniel I Pomerantz
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 10:27
CPC Classifications
C; C30; C30B; C30B29/00; C30B29/02; C30B29/06; C30B15/00; H; H10; H10D; H10D62/00; H10D62/60; H10D62/80; H10D62/83; H10D62/834; H10P; H10P10/00; H10P95/00; H10P95/50; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S148/00; Y10S148/049
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
135 words
A METHOD FOR PREPARING A SILICON CRYSTAL HAVING TWO DISTINCT CRYSTALLINE FORMATIONS WITH A TRANSFORMATION JUNCTION THEREBETWEEN COMPRISING MELTING A MASS OF SILICON IN A CONTAINER OF MATERIAL WHICH IS SUBSTANTIALLY INERT TO MOLTEN SILICON, MAINTAINING SAID MOLTEN MASS AT A TEMPERATURE ABOVE THE MELTING POINT OF SILICON IN A CHAMBER ALL PORTIONS OF WHICH ARE FORMED OF MATERIAL FREE OF CARBON AND CONTAINING AN ATMOSPHERE FREE FROM CARBON AND CARBON COMPOUNDS, PLACING A SEED CRYSTAL OF SILICON IN CONTACT WITH SAID MOLTEN SILICON, AND PROGRESSIVELY SEPARATING SAID SEED CRYSTAL FROM SAID MOLTEN SILICON AT A RATE WHEREBY MOLTEN SILICON ADHERENT TO SAID SEED CRYSTAL PROGRESSIVELY CRYSTALLIZES TO FORM A MONOCRYSTALLINE FORMATION AND INTRODUCING INTO SAID CHAMBER AT A DESIRED TRANSFORMATION POINT A GASEOUS CARBON COMPOUND TO THEREAFTER FORM A MULTICRYSTALLINE FORMATION ON SAID CRYSTAL.
Claim 2
Independent Claim
135 words
A METHOD FOR PREPARING A SILICON CRYSTAL HAVING TWO DISTINCT CRYSTALLINE FORMATIONS WITH A TRANSFORMATION JUNCTION THEREBETWEEN COMPRISING MELTING A MASS OF SILICON IN A CONTAINER OF MATERIAL WHICH IS SUBSTANTIALLY INERT TO MOLTEN SILICON, MAINTAINING SAID MOLTEN MASS AT A TEMPERATURE ABOVE THE MELTING POINT OF SILICON IN A CHAMBER ALL PORTIONS OF WHICH ARE FORMED OF MATERIAL FREE OF CARBON AND CONTAINING AN ATMOSPHERE FREE FROM CARBON AND CARBON COMPOUNDS, PLACING A SEED CRYSTAL OF SILICON IN CONTACT WITH SAID MOLTEN SILICON, AND PROGRESSIVELY SEPARATING SAID SEED CRYSTAL FROM SAID MOLTEN SILICON AT A RATE WHEREBY MOLTEN SILICON ADHERENT TO SAID SEED CRYSTAL PROGRESSIVELY CRYSTALLIZES TO FORM A MONOCRYSTALLINE FORMATION AND INTRODUCING INTO SAID CHAMBER AT A DESIRED TRANSFORMATION POINT A GASEOUS CARBON COMPOUND TO THEREAFTER FORM A MULTICRYSTALLINE FORMATION ON SAID CRYSTAL.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1968-03-15 | 1968-09-14 | 1969-03-16 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1972-03-15 | 1972-09-14 | 1973-03-16 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1976-03-15 | 1976-09-14 | 1977-03-16 | $7700.00 | Window Closed / Lapsed |