Grid controlled transistor device

Claim 1

A JUNCTION TRANSISTOR COMPRISING A BODY OF SEMICONDUCTOR MATERIAL HAVING A FIRST AND SECOND ZONE OF NTYPE GERMANIUM SEPARATED BY AN INTERMEDIATE ZONE OF PTYPE GERMANIUM, SAID FIRST AND SECOND ZONES BEING CONTIGUOUS WITH OPPOSITE FACES OF THE INTERMEDIATE ZONE, A FIRST BIASING MEANS, SAID FIRST BIASING MEANS FORWARD BIASING THE JUNCTION FORMED BY THE SAID FIRST ZONE AND INTERMEDIATE ZONE, A SECOND BIASING MEANS, SAID SECOND BIASING MEANS REVERSE BIASING THE JUNCTION FORMED BY SAID SECOND ZONE AND INTERMEDIATE ZONE, A FIRST METALLIC GRID EMBEDDED IN SAID INTERMEDIATE ZONE ADJACENT THE JUNCTION FORMED BY THE FIRST ZONE AND INTERMEDIATE ZONE, SAID FIRST METALLIC GRID COUPLED TO SAID FIRST BIASING MEANS TO MAINTAIN SAID FIRST METALLIC GRID AT A POTENTIAL HIGHER THAN THE POTENTIAL OF SAID FIRST ZONE, A SECOND METALLIC GRID EMBEDDED IN SAID INTERMEDIATE ZONE ADJACENT TO THE JUNCTION FORMED BY THE SECOND ZONE AND INTERMEDIATE ZONE, SAID SECOND METALLIC GRID COUPLED TO SAID SECOND BIASING MEANS TO MAINTAIN SAID SECOND METALLIC GRID AT A POTENTIAL HIGHER THAN THE POTENTIAL OF SAID FIRST METALLIC GRID, SAID FIRST AND SECOND METALLIC GRIDS THUS ARRANGED AND BIASED ACCELERATE AND CONTROL CARRIERS DIFFUSED FROM SAID FIRST ZONE TOWARDS SAID SECOND ZONE THROUGH THE INTERMEDIATE ZONE WHEREBY SAID JUNCTION TRANSISTOR OBTAINS A HIGH GAIN AND A DECREASE IN RECOMBINATION OF SAID CARRIERS IN THE INTERMEDIATE ZONE, AND MEANS IN SAID INTERMEDIATE ZONE TO PREVENT REVERSE FLOW OF SAID CARRIERS FROM SAID SECOND METALLIC GRID TO SAID FIRST METALLIC GRID.