Patent US3152933A successfully refreshed from Google Patents.
US3152933A
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US
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Method of producing electronic semiconductor devices having a monocrystalline body with zones of respectively different conductance
Assignee: Siemens Schuckertwerke AG
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Filing: 1962-06-06
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Granted: 1964-10-13
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Expires: 1982-06-06
Abstract
No abstract record available.
Inventors
- 👤 Reuschel Konrad
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-24 06:52
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/20; H10P14/34; H10P14/3402; H10P14/3404; H10P14/3411; C; C30; C30B; C30B23/00; H10P14/24; H10P14/29; H10P14/2901; H10P14/2902; H10P14/2905; H10P14/3414; H10P14/3421; H10P32/00; H10P32/10; H10P32/12; H10P32/17; H10P32/171; H10P95/00; Y; Y10; Y10S; Y10S118/00; Y10S118/90; Y10S148/00; Y10S148/072
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
128 words
THE METHOD OF PRODUCING ELECTRONIC SEMICONDUCTOR DEVICES HAVING A MONOCRYSTALLINE BODY WITH ZONES OF RESPECTIVELY DIFFERENT CONDUCTANCE TYPE, BY PRECIPITATION OF SEMICONDUCTOR SUBSTANCE FROM THE GASEOUS PHASE ONTO A SEMICONDUCTING CARRIER CRYSTAL, WHICH COMPRISES CUTTING A CRYSTALLINE SEMICONDUCTOR BODY BY PARALLEL INCISIONS NEARLY BUT NOT FULLY TRAVERSING THE BODY SO AS TO PRODUCE A MULTIPLICITY OF PLATE MEMBERS MERGING WITH ONE ANOTHER AT ONE LOCATION OF EACH; HEATING THE SUBDIVIDED BUT STILL COHERENT BODY TO PRECIPITATION TEMPERATURE WHILE SUBJECTING THE BODY TO A FLOW OF GAS CONTAINING GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE TO BE PRECIPITATED IN MIXTURE WITH GASEOUS REDUCING AGENT WHEREBY A COAT OF SAID SEMICONDUCTOR SUBSTANCE IS PRODUCED ON SAID RESPECTIVE PLATE MEMBERS, AND COMPLETELY SEVERING THE PLATE MEMBERS FROM ONE ANOTHER WHEN SO COATED.
Claim 2
Independent Claim
128 words
THE METHOD OF PRODUCING ELECTRONIC SEMICONDUCTOR DEVICES HAVING A MONOCRYSTALLINE BODY WITH ZONES OF RESPECTIVELY DIFFERENT CONDUCTANCE TYPE, BY PRECIPITATION OF SEMICONDUCTOR SUBSTANCE FROM THE GASEOUS PHASE ONTO A SEMICONDUCTING CARRIER CRYSTAL, WHICH COMPRISES CUTTING A CRYSTALLINE SEMICONDUCTOR BODY BY PARALLEL INCISIONS NEARLY BUT NOT FULLY TRAVERSING THE BODY SO AS TO PRODUCE A MULTIPLICITY OF PLATE MEMBERS MERGING WITH ONE ANOTHER AT ONE LOCATION OF EACH; HEATING THE SUBDIVIDED BUT STILL COHERENT BODY TO PRECIPITATION TEMPERATURE WHILE SUBJECTING THE BODY TO A FLOW OF GAS CONTAINING GASEOUS COMPOUND OF THE SEMICONDUCTOR SUBSTANCE TO BE PRECIPITATED IN MIXTURE WITH GASEOUS REDUCING AGENT WHEREBY A COAT OF SAID SEMICONDUCTOR SUBSTANCE IS PRODUCED ON SAID RESPECTIVE PLATE MEMBERS, AND COMPLETELY SEVERING THE PLATE MEMBERS FROM ONE ANOTHER WHEN SO COATED.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-10-13 | 1968-04-13 | 1968-10-13 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-10-13 | 1972-04-13 | 1972-10-13 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-10-13 | 1976-04-13 | 1976-10-13 | $7700.00 | Window Closed / Lapsed |