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US3152840A Expired / Lapsed US ⏱️ 0.0 years remaining

Semiconductor potentiometer

Assignee: Westinghouse Electric Corp
•
Filing: 1960-10-20
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Granted: 1964-10-13
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Expires: 1980-10-20
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Abstract

No abstract record available.

Inventors

  • 👤 Hung C Lin

Bibliographic Details

Application Number —
Jurisdiction US
Data Source google_patents
Last Synchronized 2026-11-03 16:29
CPC Classifications
H; H10; H10D; H10D84/00; H01; H01C; H01C10/00; H10D99/00

Claims Analysis

Total Claims: 2
Claim 1
Independent Claim 187 words
APPARATUS FOR PRODUCING AN OUTPUT REPRESENTING THE PRODUCT OF TWO DIFFERENT FUNCTIONS, SAID APPARATUS COMPRISING A JUNCTION TRANSISTOR HAVING A BASE LAYER INTERPOSED BETWEEN AN EMITTER LAYER AND A COLLECTOR LAYER, SAID BASE AND COLLECTOR LAYERS BEING OF MUCH HIGHER RESISTIVITY THAN SAID EMITTER LAYER, AN OUTPUT CONNECTION NEAR ONE END OF SAID COLLECTOR LAYER, FIRST AND SECOND CONTACTS RESPECTIVELY DISPOSED AT THE OPPOSED ENDS OF THE BASE LAYER WITH THE FIRST CONTACT BEING LOCATED ADJACENT THE OUTPUT CONNECTION, MEANS FOR APPLYING A BIAS BETWEEN THE TWO CONTACTS WITH THE VOLTAGE AT THE FIRST CONTACT BEING AT A LOWER POTENTIAL THAN THE VOLTAGE AT THE SECOND CONTACT, THE SATURATION RESISTANCE OF THE TRANSISTOR BEING A FUNCTION OF THE MAGNITUDE OF THE BIAS APPLIED BETWEEN SAID CONTACTS, MEANS FOR APPLYING AN INPUT SIGNAL ACROSS THE BASE AND EMITTER LAYERS SO THAT THE OUTPUT VOLTAGE AT SAID COLLECTOR CONNECTION IS A FUNCTION BOTH OF THE INPUT SIGNAL AND OF THE MAGNITUDE OF THE BIAS, AND AT LEAST ONE OF SAID LAYERS HAVING A NON-UNIFORM SHAPE TO VARY THE SATURATION RESISTANCE OF THE TRANSISTOR NON-LINEARLY WITH RESPECT TO THE BIAS.
Claim 2
Dependent Claim 187 words
APPARATUS FOR PRODUCING AN OUTPUT REPRESENTING THE PRODUCT OF TWO DIFFERENT FUNCTIONS, SAID APPARATUS COMPRISING A JUNCTION TRANSISTOR HAVING A BASE LAYER INTERPOSED BETWEEN AN EMITTER LAYER AND A COLLECTOR LAYER, SAID BASE AND COLLECTOR LAYERS BEING OF MUCH HIGHER RESISTIVITY THAN SAID EMITTER LAYER, AN OUTPUT CONNECTION NEAR ONE END OF SAID COLLECTOR LAYER, FIRST AND SECOND CONTACTS RESPECTIVELY DISPOSED AT THE OPPOSED ENDS OF THE BASE LAYER WITH THE FIRST CONTACT BEING LOCATED ADJACENT THE OUTPUT CONNECTION, MEANS FOR APPLYING A BIAS BETWEEN THE TWO CONTACTS WITH THE VOLTAGE AT THE FIRST CONTACT BEING AT A LOWER POTENTIAL THAN THE VOLTAGE AT THE SECOND CONTACT, THE SATURATION RESISTANCE OF THE TRANSISTOR BEING A FUNCTION OF THE MAGNITUDE OF THE BIAS APPLIED BETWEEN SAID CONTACTS, MEANS FOR APPLYING AN INPUT SIGNAL ACROSS THE BASE AND EMITTER LAYERS SO THAT THE OUTPUT VOLTAGE AT SAID COLLECTOR CONNECTION IS A FUNCTION BOTH OF THE INPUT SIGNAL AND OF THE MAGNITUDE OF THE BIAS, AND AT LEAST ONE OF SAID LAYERS HAVING A NON-UNIFORM SHAPE TO VARY THE SATURATION RESISTANCE OF THE TRANSISTOR NON-LINEARLY WITH RESPECT TO THE BIAS.

References Cited (Backward Citations)

US2744970A Cited
US2761020A Cited
US2933619A Cited
US3022472A Cited
US3029366A Cited
US2959681A Cited
US3097336A Cited
US3103599A Cited

USPTO Annuity & Maintenance Windows

Annuity Stage Window Opens Payment Deadline Surcharge Period Until Estimated Fee Status
3.5 Years (Year 4) 1967-10-13 1968-04-13 1968-10-13 $2000.00 Window Closed / Lapsed
7.5 Years (Year 8) 1971-10-13 1972-04-13 1972-10-13 $3760.00 Window Closed / Lapsed
11.5 Years (Year 12) 1975-10-13 1976-04-13 1976-10-13 $7700.00 Window Closed / Lapsed

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