US3144357A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Preparation of semiconductor materials
Assignee: National Research Development Corp UK
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Filing: 1960-07-15
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Granted: 1964-08-11
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Expires: 1980-07-15
Abstract
No abstract record available.
Inventors
- 👤 Hulme Kenneth Fraser
- 👤 Mullin John Brian
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:33
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/34; Y; Y10; Y10S; Y10S117/00; Y10S117/901; Y10S117/902; Y10S148/00; Y10S148/107
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
142 words
A PROCESS FOR THE PREPARATION OF SINGLE CRYSTALS OF SEMICONDUCTOR BINARY COMPOUNDS WHICH CONSIST OF ONE EACH OF GROUP III AND GROUP V ELEMENTS BY ZONE REFINING IN WHICH A MOLTEN ZONE IS MOVED IN A GIVEN CRYSTALGROWING DIRECTION THROUGH AN ELONGATED MASS OF THE AMTERIAL, THE CRYSTAL-GROWING DIRECTION BEING ALONG THE LONGITUDINAL AXIS OF SAID ELONGATED MASS, WITH CRYSTAL-GROWTH TAKING PLACE ALONG SAID DIRECTION AS THE MOLTEN ZONE PASSES, SAID PROCESS COMPRISING THE STEPS OF ORIENTING A SEED CRYSTAL SO THAT ITS, 1, 1, 1 DIRECTION LES OBLIQUELY TO SAID CRYSTAL-GROWING DIRECTION, RAISING THE TEMPERATURE TO ABOVE THE MELTING OINT OF A ZONE OF SAID MASS WITH A HEATER AND THEREBY ESTABLISHING A MOLTEN ZONE IN SAID MASS IN CONTACT WITH SAID SEED CRYSTAL, AND ZONE REFINING BY ESTABLISHING RELATIVE MOVEMENT BETWEEN SAID MASS AND SAID HEATER ALONG SAID CRYSTAL-GROWING DIRECTION.
Claim 2
Dependent Claim
142 words
A PROCESS FOR THE PREPARATION OF SINGLE CRYSTALS OF SEMICONDUCTOR BINARY COMPOUNDS WHICH CONSIST OF ONE EACH OF GROUP III AND GROUP V ELEMENTS BY ZONE REFINING IN WHICH A MOLTEN ZONE IS MOVED IN A GIVEN CRYSTALGROWING DIRECTION THROUGH AN ELONGATED MASS OF THE AMTERIAL, THE CRYSTAL-GROWING DIRECTION BEING ALONG THE LONGITUDINAL AXIS OF SAID ELONGATED MASS, WITH CRYSTAL-GROWTH TAKING PLACE ALONG SAID DIRECTION AS THE MOLTEN ZONE PASSES, SAID PROCESS COMPRISING THE STEPS OF ORIENTING A SEED CRYSTAL SO THAT ITS, 1, 1, 1 DIRECTION LES OBLIQUELY TO SAID CRYSTAL-GROWING DIRECTION, RAISING THE TEMPERATURE TO ABOVE THE MELTING OINT OF A ZONE OF SAID MASS WITH A HEATER AND THEREBY ESTABLISHING A MOLTEN ZONE IN SAID MASS IN CONTACT WITH SAID SEED CRYSTAL, AND ZONE REFINING BY ESTABLISHING RELATIVE MOVEMENT BETWEEN SAID MASS AND SAID HEATER ALONG SAID CRYSTAL-GROWING DIRECTION.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-08-11 | 1968-02-10 | 1968-08-11 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-08-11 | 1972-02-10 | 1972-08-11 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-08-11 | 1976-02-10 | 1976-08-11 | $7700.00 | Window Closed / Lapsed |