US2829994A
Expired / Lapsed
US
⏱️ 0.0 years remaining
Method for preparing silicon-germanium alloys
Assignee: Raytheon Co
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Filing: 1955-10-06
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Granted: 1958-04-08
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Expires: 1975-10-06
Abstract
No abstract record available.
Inventors
- 👤 Phyllis E Stello
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-11-07 23:45
CPC Classifications
C; C30; C30B; C30B13/00; C30B13/08; H; H10; H10P; H10P95/00
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
208 words
THE METHOD OF GROWING A SINGLE CRYSTAL INGOT OF GERMANIUM-SILICON ALLOY, SAID METHOD COMPRISING THE STEPS OF: PROVIDING AN INGOT OF GERMANIUM-SILICON SOURCE MATERIAL, SAID GERMANIUM-SILICON SOURCE INGOT HAVING A PREDETERMINED QUANTITY OF SOLID SILICON POSITIONED IMMEDIATELY ADJACENT TO AND THROUGHOUT THE LENGHT OF AN INGOT OF SOLID GERMANIUM, POSITIONING A ZONE OF GERMANIUM AND SILICON OF A SECOND PREDETERMINED COMPOSITION LONGITUDINALLY ADJACENT SAID GERMANIUM-SILICON SOURCE INGOT, POSITIONING A GERMANIUM SEED CRYSTAL ADJACENT SAID GERMANIUM-SILICON ZONE, LOCALLY HEATING A PORTION OF THE INGOT, ZONE, AND CRYSTAL TO CREATE A MOLTEN ALLOY ZONE HAVING A PREDETERMINED TEMPERATURE BETWEEN THE SINGLE CRYSTAL AND THE SOURCE MATERIAL INGOT SUBSTANTIALLY EQUAL IN LENGTH TO THE LENGTH OF SAID GERMANIUM-SILICON ZONE, AND MOVING THE INGOT, ZONE, AND CRYSTAL RELATIVE TO THE LOCAL HEATING WHILE MAINTAINING SAID TEMPERATURE SUBSTANTIALLY CONSTANT AT SAID PREDETERMINED VALUE TO MOVE THE MOLTEN ZONE THROUGH THE SOURCE MATERIAL INGOT AWAY FROM THE SEED CRYSTAL TO DEPOSIT GERMANIUM-SILICON ALLOY OF A COMPOSITION SUBSTANTIALLY EQUAL TO THE COMPOSITION DETERMINED BY THE FIRST PREDETERMINED QUANTITY OF SILICON IN SAID SOURCE MATERIAL FROM THE MOLTEN ALLOY ZONE, AND TO DEPOSIT SILICON AND GERMANIUM FROM THE SOURCE MATERIAL INGOT INTO THE MOLTEN ZONE TO MAINTAIN THE COMPOSITION THEREOF SUBSTANTIALLY EQUAL TO SAID SECOND COMPOSITION.
Claim 2
Independent Claim
208 words
THE METHOD OF GROWING A SINGLE CRYSTAL INGOT OF GERMANIUM-SILICON ALLOY, SAID METHOD COMPRISING THE STEPS OF: PROVIDING AN INGOT OF GERMANIUM-SILICON SOURCE MATERIAL, SAID GERMANIUM-SILICON SOURCE INGOT HAVING A PREDETERMINED QUANTITY OF SOLID SILICON POSITIONED IMMEDIATELY ADJACENT TO AND THROUGHOUT THE LENGHT OF AN INGOT OF SOLID GERMANIUM, POSITIONING A ZONE OF GERMANIUM AND SILICON OF A SECOND PREDETERMINED COMPOSITION LONGITUDINALLY ADJACENT SAID GERMANIUM-SILICON SOURCE INGOT, POSITIONING A GERMANIUM SEED CRYSTAL ADJACENT SAID GERMANIUM-SILICON ZONE, LOCALLY HEATING A PORTION OF THE INGOT, ZONE, AND CRYSTAL TO CREATE A MOLTEN ALLOY ZONE HAVING A PREDETERMINED TEMPERATURE BETWEEN THE SINGLE CRYSTAL AND THE SOURCE MATERIAL INGOT SUBSTANTIALLY EQUAL IN LENGTH TO THE LENGTH OF SAID GERMANIUM-SILICON ZONE, AND MOVING THE INGOT, ZONE, AND CRYSTAL RELATIVE TO THE LOCAL HEATING WHILE MAINTAINING SAID TEMPERATURE SUBSTANTIALLY CONSTANT AT SAID PREDETERMINED VALUE TO MOVE THE MOLTEN ZONE THROUGH THE SOURCE MATERIAL INGOT AWAY FROM THE SEED CRYSTAL TO DEPOSIT GERMANIUM-SILICON ALLOY OF A COMPOSITION SUBSTANTIALLY EQUAL TO THE COMPOSITION DETERMINED BY THE FIRST PREDETERMINED QUANTITY OF SILICON IN SAID SOURCE MATERIAL FROM THE MOLTEN ALLOY ZONE, AND TO DEPOSIT SILICON AND GERMANIUM FROM THE SOURCE MATERIAL INGOT INTO THE MOLTEN ZONE TO MAINTAIN THE COMPOSITION THEREOF SUBSTANTIALLY EQUAL TO SAID SECOND COMPOSITION.
References Cited (Backward Citations)
US2191479A
Cited
US2739088A
Cited
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1961-04-07 | 1961-10-07 | 1962-04-08 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1965-04-07 | 1965-10-07 | 1966-04-08 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1969-04-07 | 1969-10-07 | 1970-04-08 | $7700.00 | Window Closed / Lapsed |