Patent US3139599A successfully refreshed from Google Patents.
US3139599A
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Infrared detector with pn junctions in indium antimonide
Assignee: Texas Instruments Inc
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Filing: 1960-12-09
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Granted: 1964-06-30
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Expires: 1980-12-09
Abstract
No abstract record available.
Inventors
- 👤 Curtis M Mesecke
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-29 19:58
CPC Classifications
G; G01; G01J; G01J5/00; G01J5/10; G01J5/28; F; F17; F17C; F17C3/00; F17C3/02; F17C3/08; F17C3/085; H; H10; H10F; H10F99/00; Y; Y10; Y10S; Y10S252/00; Y10S252/95
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
57 words
AN INFRARED DETECTOR COMPRISING A WAFER OF INDIUM ANTIMONIDE HAVING A THICKNESS OF ABOUT 30 MILS AND A RESISTIVITY OF ABOUT 18 OHM-CM., SAID WAFER HAVING A P-TYPE LAYER AND HAVING AN N-TYPE LAYER FORMED THEREIN BY DIFFUSING AN ALLOY OF ABOUT 50% TELLURIUM, ABOUT 5% GALLIUM, AND ABOUT 45% INDIUM INTO SAID WAFER OF INDIUM ANTIMONIDE.
Claim 2
Dependent Claim
57 words
AN INFRARED DETECTOR COMPRISING A WAFER OF INDIUM ANTIMONIDE HAVING A THICKNESS OF ABOUT 30 MILS AND A RESISTIVITY OF ABOUT 18 OHM-CM., SAID WAFER HAVING A P-TYPE LAYER AND HAVING AN N-TYPE LAYER FORMED THEREIN BY DIFFUSING AN ALLOY OF ABOUT 50% TELLURIUM, ABOUT 5% GALLIUM, AND ABOUT 45% INDIUM INTO SAID WAFER OF INDIUM ANTIMONIDE.
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USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1967-06-30 | 1967-12-30 | 1968-06-30 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1971-06-30 | 1971-12-30 | 1972-06-30 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1975-06-30 | 1975-12-30 | 1976-06-30 | $7700.00 | Window Closed / Lapsed |