Electronic memory driving

Claim 1

FOR A MAGNETIC MEMORY SYSTEM, A COMMON MATRIX FOR PROVIDING READ AND WRITE CURRENT SIGNALS COMPRISING: A PLURALITY OF GROUPS OF AT LEAST ONE MAGNETIC ELEMENT; A PLURALITY OF CURRENT CONDUCTORS, EACH CORRESPONDING TO AND LINKING A SEPARATE ONE OF SAID GROUPS OF MAGNETIC ELEMENTS; A COMMON SOURCE OF READ AND WRITE CURRENT; A FIRST TRANSISTOR SWITCH CONNECTED TO SAID CURRENT SOURCE AND OPERATIVE WHEN CONDUCTING TO DERIVE READ CURRENT THEREFROM; A SECOND TRANSISTOR SWITCH CONNECTED TO SAID CURRENT SOURCE AND OPERATIVE WHEN CONDUCTING TO DERIVE WRITE CURRENT THEREFROM; A PLURALITY OF POINTS OF REFERENCE POTENTIAL; MEANS CONNECTING SAID FIRST TRANSISTOR SWITCH TO ONE END OF EACH OF SAID CONDUCTORS; MEANS CONNECTED BETWEEN THE OTHER END OF EACH OF SAID CONDUCTORS AND ONE OF SAID POINTS OF REFERENCE POTENTIAL FOR CONDUCTING READ CURRENT IN ONE DIRECTION THROUGH ANY SELECTED ONE OF SAID CONDUCTORS; MEANS CONNECTING SAID SECOND TRANSISTOR SWITCH TO THE SAID OTHER END OF EACH OF SAID CONDUCTORS; MEANS CONNECTED BETWEEN THE SAID ONE END OF EACH OF SAID CONDUCTORS AND ONE OF SAID POINTS OF REFERENCE POTENTIAL FOR CONDUCTING WRITE CURRENT IN THE OPPOSITE DIRECTION THROUGH ANY SELECTED ONE OF SAID CONDUCTORS; MEANS INCLUDING A DIODE CLAMP CONNECTED BETWEEN SAID CURRENT SOURCE AND A REFERENCE POINT OF CURRENT FLOW FOR PROVIDING A SHUNT CURRENT PATH WHEN SAID FIRST AND SECOND TRANSISTORS ARE NON-CONDUCTING; AND MEANS CONNECTED TO SAID CONDUCTORS AND OPERATIVE TO PREVENT CURRENT FLOW THROUGH OTHER ONES OF SAID CONDUCTORS WHEN CURRENT IS CAUSED TO FLOW THROUGH A SELECTED CONDUCTOR, SAID LASTMENTIONED MEANS INCLUDING A PLURALITY OF DIODES CONNECTED TO SAID OTHER END OF EACH OF SAID CONDUCTORS AND THE COLLECTOR-EMITTER JUNCTIONS OF A PLURALITY OF TRANSISTORS CONNECTED TO SAID ONE END OF SAID CONDUCTORS.