Process of manufacturing field-effect transistors

Claim 1

A METHOD OF MANUFACTURING FIELD-EFFECT ROD-SHAPED TRANSISTORS HAVING A THINNED CYLINDRICAL ROD PORTION CONSISTING OF A SEMICONDUCTIVE MATERIAL IN A CIRCULAR CROSS SECTION, COMPRISING THE STEPS OF PROVIDING A CYLINDRICAL ROD OF SEMICONDUCTOR MATERIAL WITH OHMIC ELECTRODES AT THE END SURFACES OF SAID RODS, PASSING A CONTROLLING CURRENT BETWEEN SAID ELECTRODES THROUGH SAID ROD AND SIMULTANEOUSLY ROTATING SAID ROD UNDER THE JET ACTION OF AN ETCHING ELECTROLYTE IN A DIRECTION TOWARDS THE AXIS OF SAID ROD, POSITIVELY BIASING SAID ROD WITH RESPECT TO SAID ELECTROLYTE WHEREBY THE JET ETCHING ACTION OF SAID ELECTROLYTE SINKS A NECKED-SHAPED THINNED PORTION INTO THE OUTER SURFACE OF SAID ROD AND INCREASES THE RESISTANCE IN THE THINNED PORTION TO REDUCE THE VALUE OF SAID CONTROLLING CURRENT APPLIED BETWEEN THE END ELECTRODES, SAID CONTROLLING CURRENT BEING THEN REDUCED BELOW A PREDETERMINED VALUE WHICH IS EFFECTIVE TO INVERT THE POLARITY OF THE ORIGINAL POSITIVE BIASING, STOPPING THE JET ETCHING UNDER THE CONTROL OF THE INVERSION OF POLARITY AND THEREAFTER STILL ROTATING SAID ROD AND LOCATING THE NECKED PORTION BELOW THE JET ACTION OF A SECOND ELECTROLYTE WHICH IS AN ELECTROPLATING ELECTROLYTE, PROJECTING SAID ELECTROLYTE ON TO A GATE LOCATION ON THE THINNED PORTION OF SAID ROD AND FORMING THE GATE AS AN ANNULUS OF METAL CONDUCTOR SURROUNDING THE NECKED PORTION OF SAID ROD AS A RESULT OF THE ELECTROPLATING ACTION OF SAID SECOND ELECTROLYTE.

Claim 2

A METHOD OF MANUFACTURING FIELD-EFFECT ROD-SHAPED TRANSISTORS HAVING A THINNED CYLINDRICAL ROD PORTION CONSISTING OF A SEMICONDUCTIVE MATERIAL IN A CIRCULAR CROSS SECTION, COMPRISING THE STEPS OF PROVIDING A CYLINDRICAL ROD OF SEMICONDUCTOR MATERIAL WITH OHMIC ELECTRODES AT THE END SURFACES OF SAID RODS, PASSING A CONTROLLING CURRENT BETWEEN SAID ELECTRODES THROUGH SAID ROD AND SIMULTANEOUSLY ROTATING SAID ROD UNDER THE JET ACTION OF AN ETCHING ELECTROLYTE IN A DIRECTION TOWARDS THE AXIS OF SAID ROD, POSITIVELY BIASING SAID ROD WITH RESPECT TO SAID ELECTROLYTE WHEREBY THE JET ETCHING ACTION OF SAID ELECTROLYTE SINKS A NECKED-SHAPED THINNED PORTION INTO THE OUTER SURFACE OF SAID ROD AND INCREASES THE RESISTANCE IN THE THINNED PORTION TO REDUCE THE VALUE OF SAID CONTROLLING CURRENT APPLIED BETWEEN THE END ELECTRODES, SAID CONTROLLING CURRENT BEING THEN REDUCED BELOW A PREDETERMINED VALUE WHICH IS EFFECTIVE TO INVERT THE POLARITY OF THE ORIGINAL POSITIVE BIASING, STOPPING THE JET ETCHING UNDER THE CONTROL OF THE INVERSION OF POLARITY AND THEREAFTER STILL ROTATING SAID ROD AND LOCATING THE NECKED PORTION BELOW THE JET ACTION OF A SECOND ELECTROLYTE WHICH IS AN ELECTROPLATING ELECTROLYTE, PROJECTING SAID ELECTROLYTE ON TO A GATE LOCATION ON THE THINNED PORTION OF SAID ROD AND FORMING THE GATE AS AN ANNULUS OF METAL CONDUCTOR SURROUNDING THE NECKED PORTION OF SAID ROD AS A RESULT OF THE ELECTROPLATING ACTION OF SAID SECOND ELECTROLYTE.