Thin magnetic film

Claim 1

S PROCESS OF MAKING A BISTABLE MAGNETIC MEMORY ELEMENT EXHIBITING A COERCIVE FORCE OF LESS THAN 5 OERSTEDS AND A SWITCHING CONSTANT OF APPROXIMATELY 0.02 OERSTEDMICROSECOND COMPRISING THE STEPS OF: (1) IMNERSING A NON-MAGNETIC SUBSTRATE IN AN ELECTROLESS NICKEL PLATING BATH HAVING THE COMPOSITION: 30G./1, NICL.6H2O, 10 G./1. NAH2PO2.2H2O, 50 G./1., NH4CL, 100 G./1. SODIUM CITRATE, SAID BATH HAVING A PH OF 7.5-8.0 AND A TEMPERATURE OF 95*C., FOR BETWEEN 4 TO 10 SECONDS TO FORM AN ADHERENT LAYER OF ELECTROLESSLY DEPOSITED NICKEL ON SAID SUBSTRATE; (C) RINSING THE ELECTROLESSLY DEPOSITED NICKEL LAYER TO REMOVE EXCESS PLATING BATH SOLUTION; (2) BAKING THE SUBSTRATE WITH THE ELECTROLESSLY DEPOSITED NICKEL LAYER AT A TEMPERATURE BETWEEN 130*-190* C. FOR 10 TO 25 MINUTES; (4) THEREAFTER SUBJECTING THE BAKED ELETROLESSLY DEPOSITED NICKEL LAYER TO ELECTROLYTIC ACTION IN AN ELECTROPLATING BATH HAVING THE COMPOSITION: 10 G./1. FESO4 7H2O 200 G./1. NICL2.6H2O, 25 G./1. H3BO3, 0.84 G./1. SACCHARIN, 0.42 G./1. SODIUM LAURYL SULFATE, SAID ELECTROPLATING BATH HAVING A PH OF 2.85 AND BEING MAINTAINED AT ROOM TEMPERATURE. FOR ABOUT 1 MINUTE TO DEPOSIT A NICKEL-IRON ALLOY HAVING A THICKNESS IN THE ORDER OF 2000 A. ON THE ELECTROLESSLY DEPOSITED NICKEL LAYER.