Circuit for sensing signal outptut of a magnetic-core memory

Claim 1

IN A MAGNETIC-CORE MEMORY SYSTEM OF THE TYPE WHEREIN A READING DRIVE IS APPLIED TO A MAGNETIC CORE TO TRANSFER IT FROM ONE TO THE OTHER OF ITS STATES OF REMANENCE IF NOT ALREADY IN SAID STATE AT THE TERMINATION OF OTHER DRIVES APPLIED TO SAID CORE, AND A SENSE WINDING HAVING OUTPUT TERMINALS IS INDUCTIVELY COUPLED TO SAID CORE FOR HAVING OUTPUT DIGIT VOLTAGE SIGNAL INDUCED THEREIN SHOULD SAID CORE BE TRANSFERRED, A CIRCUIT FOR ELIMINATING THE EFFECTS OF SAID NOISE SIGNALS INDUCED IN SAID SENSE WINDING DUE TO TERMINATION OF SAID OTHER DRIVES COMPRISING AMPLIFIER MEANS HAVING AN INPUT AND OUTPUT, MEANS COUPLING SAID SENSE WINDING OUTPUT TERMINALS TO SAID AMPLIFIER MEANS INPUT, MEANS FOR BYPASSING SAID NOISE SIGNALS AND ALLOWING SAID DIGIT VOLTAGE SIGNAL TO BE APPLIED TO SAID AMPLIFIER MEANS INCLUDING A DIODE, A BIAS SOURCE FOR SAID DIODE, MEANS CONNECTING SAID DIODE AND BIAS SOURCE ACROSS SAID SENSE WINDING OUTPUT TERMININALS FOR BYPASSING NOISE SIGNALS OF A GIVEN POLARITY EXCEEDING THE AMPLITUDE OF SAID BIAS SOURCE, A FIRST TRANSISTOR HAVING COLECTOR, EMITTER, AND BASE ELECTRODES, MEANS CONNECTING SAID FIRST TRANSISTOR EMITTER AND COLLECTOR TO SAID AMPLIFIER MEANS INPUT FOR BYPASSING ANY SIGNALS APPLIED THERETO, MEANS FOR APPLYING A BIAS TO SAID FIRST TRANSISTOR BASE TO MAINTAIN SAID FIRST TRANSISTOR CONDUCTIVE, MEANS FOR APPLYING A SIGNAL TO SAID FIRST TRANSISTOR BASE TO RENDER SAID FIRST TRANSISTOR NONCONDUCTIVE UPON THE COMMENCEMENT OF SAID READING DRIVE OVER THE INTERVAL OF SAID READING DRIVE, AND MEANS INCLUDING A DIFFERENTIATING CIRCUIT FOR DERIVING AN OUTPUT SIGNAL FROM SAID AMPLIFIER MEANS OUTPUT DURING THE INTERVAL OF SAID READING DRIVE WHICH DOES NOT HAVE ITS DIRECT-CURRENT LEVEL AFFECTED BY ANY PRECEDING SIGNALS.