Patent US3095341A successfully refreshed from Google Patents.
US3095341A
Expired / Lapsed
US
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Photosensitive gas phase etching of semiconductors by selective radiation
Assignee: AT&T Inc
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Filing: 1961-06-30
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Granted: 1963-06-25
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Expires: 1981-06-30
Abstract
No abstract record available.
Inventors
- 👤 Joseph R Ligenza
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-27 19:20
CPC Classifications
C; C23; C23F; C23F1/00; C23F1/02; C23F1/10; C23F1/12; H; H10; H10P; H10P50/00; H10P50/20; H10P50/24; H10P50/242
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
129 words
A METHOD FOR SELECTIVELY ETCHING A DESIRED PATTERN ON A WORKPIECE CAPABLE OF FORMING HALIDES WHICH ARE SUBSTANTIALLY COMPLETELY VOLATILE AT THE PROCESSING TEMPERATURE, SAID METHOD COMPRISING POSITIONING THE WORKPIECE IN AMBIENT GASES INCLUDING A HEAT-ACTIVATED HALIDE GAS CAPABLE OF FORMING SAID HALIDES WITH SAID WORKPIECE FOR ETCHING THE SURFACE OF THE WORKPIECE WHEN ACTIVATED AND A LIGHT-DISSOCIABLE GAS CAPABLE OF BEING DISSOCIATED BY INCIDENT RADIATION AND OF RECOMBINING IN THE ABSENCE OF SUCH RADIATION WITH A RELEASE OF ENERGY, POSITIONING OVER SAID WORKPIECE A MASK FOR SHADOWING A PORTION THEREOF TO BE ETCHED AND PROVIDING RADIATION CAPABLE OF DISSOCIATING ENOUGH OF SAID LIGHT-DISSOCIABLE GAS FOR RAISING THE TEMPERATURE OF SAID SHADOWED PORTIONS TO A PROCESSING TEMPERATURE SUFFICIENT TO CAUSE LOCALIZED ETCHING THERE WHILE LITTLE AFFECTING THE ILLUMINATED PORTIONS.
Claim 2
Independent Claim
129 words
A METHOD FOR SELECTIVELY ETCHING A DESIRED PATTERN ON A WORKPIECE CAPABLE OF FORMING HALIDES WHICH ARE SUBSTANTIALLY COMPLETELY VOLATILE AT THE PROCESSING TEMPERATURE, SAID METHOD COMPRISING POSITIONING THE WORKPIECE IN AMBIENT GASES INCLUDING A HEAT-ACTIVATED HALIDE GAS CAPABLE OF FORMING SAID HALIDES WITH SAID WORKPIECE FOR ETCHING THE SURFACE OF THE WORKPIECE WHEN ACTIVATED AND A LIGHT-DISSOCIABLE GAS CAPABLE OF BEING DISSOCIATED BY INCIDENT RADIATION AND OF RECOMBINING IN THE ABSENCE OF SUCH RADIATION WITH A RELEASE OF ENERGY, POSITIONING OVER SAID WORKPIECE A MASK FOR SHADOWING A PORTION THEREOF TO BE ETCHED AND PROVIDING RADIATION CAPABLE OF DISSOCIATING ENOUGH OF SAID LIGHT-DISSOCIABLE GAS FOR RAISING THE TEMPERATURE OF SAID SHADOWED PORTIONS TO A PROCESSING TEMPERATURE SUFFICIENT TO CAUSE LOCALIZED ETCHING THERE WHILE LITTLE AFFECTING THE ILLUMINATED PORTIONS.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-06-24 | 1966-12-24 | 1967-06-25 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-06-24 | 1970-12-24 | 1971-06-25 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-06-24 | 1974-12-24 | 1975-06-25 | $7700.00 | Window Closed / Lapsed |