Method of making degeneratively doped group iii-v compound semiconductor material

Claim 1

THE METHOD OF MAKING A GROUP III-V COMPOUND SEMICONDUCTOR HAVING A CONTROLLED DEGENEATE CONDUCTIVITY DETERMININGG IMPURITY LEVEL THEREIN FORMED OF A FIRST ELEMENT AND A SECOND MORE VOLATILE ELEMENT, SAID METHOD COMPRISING THE STEPS OF PROVIDING A REACTION CHAMBER HAVING AT LEAST A HIGH TEMPERATURE ZONE AND A LOW TEMPERATURE ZONE, HEATING IN SAID HIGH TEMPERATURE ZONE A MIXTURE OF SAID FIRST ELEMENT AND A DOPING AGENT EFFECTIVE TO PRODUCE A DEGENERATE CONDUCTIVITY DETERMINING IMPURITY LEVEL IN SAID COMPOUND SEMICONDUCTOR, SAID DOPING AGENT BEING PROVIDED IN EXCESS, PROVIDING IN SAID LOW TEMPERATURE ZONE AN AMPUNT OF SAID SECOND ELEMENT GREATER THAN THAT AMOUNT REQUIRED TO FORM A STOICHIOMETRIC MOLTEN COMPOUND WITH SAID FIRST ELEMENT, CONTROLLING THE TEMPERATURE IS SAID LOW TEMPERATURE ZONE SUCH THAT AT LEAST A PORTION OF SAID SECOND ELEMENT VAPORIZES PRODUCING THE VAPOR PRESSURE OF SAID SECOND ELEMENT IN SAID REACTION CHAMBER REQUIRED TO COMBINE WITH SAID FIRST ELEMENT AND FORM A MELT OF SAID COMPOUND SEMICONDUCTOR SIGNIFICANTLY RICH IN THE GROUP III ELEMENT, CONTROLLING THE TEMPERATURE IN SAID HIGH TEMPERATURE ZONE SUCH THAT SAID FIRST ELEMENT AND DOPING AGENT MIXTURE ARE MAINTAINED ABOVE THE MELTING TEEMPERATURE OF SAID COMPOUND FOR A TIME SUFFICIENT TO ASSURE REACTION BETWEEN SAID FIRST AND SECOND SECOND ELEMENTS TO FORM THE MELT OF SAID COMPOUND SEMOCINDUCTOR SIGNIFICANTLY RICH IN THE GROUP III ELEMENT, ESTABLISHING A TEMPERATURE GRADIENT THROUGH SAID MELT, LOWERING THE TEMPERATURE OF SAID HIGH TEMPERATURE ZONE WHILE MAINNTAINING SAID TEMPERATURE GRADIENT TO FREEZE SAID MELT PROGESSIVELY FROM ONE END TO PRODUCE THE CONTROLLED DEGENERATE CONDUCTIVITY DETERMINING IMPURITY LEVEL BETWEEN 10**19 AND 5X10**19 CARRIERS PER CC. IN SAID GROUP III-V COMPOUND SEMICONDUCTOR.

Claim 2

THE METHOD OF MAKING A GROUP III-V COMPOUND SEMICONDUCTOR HAVING A CONTROLLED DEGENEATE CONDUCTIVITY DETERMININGG IMPURITY LEVEL THEREIN FORMED OF A FIRST ELEMENT AND A SECOND MORE VOLATILE ELEMENT, SAID METHOD COMPRISING THE STEPS OF PROVIDING A REACTION CHAMBER HAVING AT LEAST A HIGH TEMPERATURE ZONE AND A LOW TEMPERATURE ZONE, HEATING IN SAID HIGH TEMPERATURE ZONE A MIXTURE OF SAID FIRST ELEMENT AND A DOPING AGENT EFFECTIVE TO PRODUCE A DEGENERATE CONDUCTIVITY DETERMINING IMPURITY LEVEL IN SAID COMPOUND SEMICONDUCTOR, SAID DOPING AGENT BEING PROVIDED IN EXCESS, PROVIDING IN SAID LOW TEMPERATURE ZONE AN AMPUNT OF SAID SECOND ELEMENT GREATER THAN THAT AMOUNT REQUIRED TO FORM A STOICHIOMETRIC MOLTEN COMPOUND WITH SAID FIRST ELEMENT, CONTROLLING THE TEMPERATURE IS SAID LOW TEMPERATURE ZONE SUCH THAT AT LEAST A PORTION OF SAID SECOND ELEMENT VAPORIZES PRODUCING THE VAPOR PRESSURE OF SAID SECOND ELEMENT IN SAID REACTION CHAMBER REQUIRED TO COMBINE WITH SAID FIRST ELEMENT AND FORM A MELT OF SAID COMPOUND SEMICONDUCTOR SIGNIFICANTLY RICH IN THE GROUP III ELEMENT, CONTROLLING THE TEMPERATURE IN SAID HIGH TEMPERATURE ZONE SUCH THAT SAID FIRST ELEMENT AND DOPING AGENT MIXTURE ARE MAINTAINED ABOVE THE MELTING TEEMPERATURE OF SAID COMPOUND FOR A TIME SUFFICIENT TO ASSURE REACTION BETWEEN SAID FIRST AND SECOND SECOND ELEMENTS TO FORM THE MELT OF SAID COMPOUND SEMOCINDUCTOR SIGNIFICANTLY RICH IN THE GROUP III ELEMENT, ESTABLISHING A TEMPERATURE GRADIENT THROUGH SAID MELT, LOWERING THE TEMPERATURE OF SAID HIGH TEMPERATURE ZONE WHILE MAINNTAINING SAID TEMPERATURE GRADIENT TO FREEZE SAID MELT PROGESSIVELY FROM ONE END TO PRODUCE THE CONTROLLED DEGENERATE CONDUCTIVITY DETERMINING IMPURITY LEVEL BETWEEN 10**19 AND 5X10**19 CARRIERS PER CC. IN SAID GROUP III-V COMPOUND SEMICONDUCTOR.