Patent US3078151A successfully refreshed from Google Patents.
US3078151A
Expired / Lapsed
US
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Apparatus for drawing semiconductor bodies from a melt
Assignee: Siemens and Halske AG
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Filing: 1959-09-25
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Granted: 1963-02-19
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Expires: 1979-09-25
Abstract
No abstract record available.
Inventors
- 👤 Kappelmeyer Rudolf
Bibliographic Details
Application Number
—
Jurisdiction
US
Data Source
google_patents
Last Synchronized
2026-10-23 12:47
CPC Classifications
C; C30; C30B; C30B15/00; C30B15/20; C30B15/22; C30B15/24; C30B15/10; Y; Y10; Y10S; Y10S117/00; Y10S117/90; Y10S148/00; Y10S148/107; Y10T; Y10T117/00; Y10T117/10; Y10T117/1024; Y10T117/1032; Y10T117/1036; Y10T117/1052
Claims Analysis
Total Claims: 2
Claim 1
Independent Claim
131 words
IN THE ART OF DRAWING RELATIVELY THIN SUBSTANTIALLY MONOCRYSTALINE SEMICONDUCTOR RODS FROM A SEMICONDUCTOR MELT, A CRUCIBLE DEVICE CONTAINING SUCH MELT, SAID CRUCIBLE DEVICE COMPRISING FIRMLY INTERCONNECTED OUTER AND INNER PARTS, SAID INNER PART HAVING A BOTTOM WALL DISPOSED SUBSTANTIALLY BELOW THE UPPER EDGE OF SAID OUTER PART AND CONTAINING A CAPILLARY OPENING FIXED DISPOSED IN SAID MELT AT A LEVEL LYING BELOW BUT OTHERWISE INDEPENDENT OF THE HIGHEST SURFACE LEVEL OF THE MELT, SAID OPENING HAVING A SIZE SUFFICIENTLY LARGE TO PERMIT THE CONTINUOUS DRAWING OF SEMICONDUCTOR MATERIAL THERETHROUGH TO FORM A SEMICONDUCTOR ROD OF PREDETERMINED SIZE AND AT THE SAME TIME OF A SIZE SUFFICIENTLY SMALL TO PREVENT, BY CAPILLARY ACTION, UPWARD FLOW THERETHROUGH OF SEMICONDUCTOR MATERIAL WHEN THE OPENING IS DISPOSED AT NORMAL OPERATING DEPTH IN THE MELT.
Claim 2
Dependent Claim
131 words
IN THE ART OF DRAWING RELATIVELY THIN SUBSTANTIALLY MONOCRYSTALINE SEMICONDUCTOR RODS FROM A SEMICONDUCTOR MELT, A CRUCIBLE DEVICE CONTAINING SUCH MELT, SAID CRUCIBLE DEVICE COMPRISING FIRMLY INTERCONNECTED OUTER AND INNER PARTS, SAID INNER PART HAVING A BOTTOM WALL DISPOSED SUBSTANTIALLY BELOW THE UPPER EDGE OF SAID OUTER PART AND CONTAINING A CAPILLARY OPENING FIXED DISPOSED IN SAID MELT AT A LEVEL LYING BELOW BUT OTHERWISE INDEPENDENT OF THE HIGHEST SURFACE LEVEL OF THE MELT, SAID OPENING HAVING A SIZE SUFFICIENTLY LARGE TO PERMIT THE CONTINUOUS DRAWING OF SEMICONDUCTOR MATERIAL THERETHROUGH TO FORM A SEMICONDUCTOR ROD OF PREDETERMINED SIZE AND AT THE SAME TIME OF A SIZE SUFFICIENTLY SMALL TO PREVENT, BY CAPILLARY ACTION, UPWARD FLOW THERETHROUGH OF SEMICONDUCTOR MATERIAL WHEN THE OPENING IS DISPOSED AT NORMAL OPERATING DEPTH IN THE MELT.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
| Annuity Stage | Window Opens | Payment Deadline | Surcharge Period Until | Estimated Fee | Status |
|---|---|---|---|---|---|
| 3.5 Years (Year 4) | 1966-02-18 | 1966-08-20 | 1967-02-19 | $2000.00 | Window Closed / Lapsed |
| 7.5 Years (Year 8) | 1970-02-18 | 1970-08-20 | 1971-02-19 | $3760.00 | Window Closed / Lapsed |
| 11.5 Years (Year 12) | 1974-02-18 | 1974-08-20 | 1975-02-19 | $7700.00 | Window Closed / Lapsed |